Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Marc E. Sherwin"'
Autor:
Robert S. Howell, Ty McNutt, Stephen Van Campen, Ranbir Singh, Ginger G. Walden, Marc E. Sherwin
Publikováno v:
Materials Science Forum. :1139-1142
For the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performance and power dissipation of silicon carbide (SiC) n-channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee6f0938db04c12eb6d8494e579897af
https://doi.org/10.4028/www.scientific.net/msf.600-603.1139
https://doi.org/10.4028/www.scientific.net/msf.600-603.1139
Autor:
Marc E. Sherwin, Ranbir Singh, Chris Kirby, Stephen Van Campen, Kathy Ha, Harold Hearne, Andy Walker, Ty McNutt
Publikováno v:
Materials Science Forum. :951-954
The development of 10 kV silicon carbide (SiC) MOSFETs and Junction Barrier Schottky (JBS) diodes for application to a 13.8kV 2.7 MVA Solid State Power Substation (SSPS) is shown. The design of half-bridge power modules has extensively used simulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f08395699cf83b7c13e537a25cca1359
https://doi.org/10.4028/www.scientific.net/msf.600-603.951
https://doi.org/10.4028/www.scientific.net/msf.600-603.951
Autor:
Marc E. Sherwin, D. Kahler, Narsingh B. Singh, Brian P. Wagner, David J. Knuteson, Andre Berghmans, Darren Thomson
Publikováno v:
ECS Transactions. 2:37-48
Physical vapor transport (PVT) growth method was used to grow bulk crystals of AlN and thick epitaxial SiC films on on-axis Si-face 4H-SiC(0001) substrates from the powder source materials. Both bulk and thick film crystals were characterized by scan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e761d8a18f117b12206d1063243f729f
https://doi.org/10.1149/1.2204877
https://doi.org/10.1149/1.2204877
Autor:
Sean McLaughlin, Pavel Borodulin, Michael J. Lee, Evan B. Jones, El-Hinnawy Nabil, Robert S. Howell, Robert M. Young, Marc E. Sherwin, Matthew R. King, John S. Mason, B. Wagner, Victor Veliadis, Megan Snook
Publikováno v:
IEEE Electron Device Letters. 34:1313-1315
An inline chalcogenide phase-change radio-frequency (RF) switch using germanium telluride and driven by an integrated, electrically isolated thin-film heater for thermal actuation has been fabricated. A voltage pulse applied to the heater terminals w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f282c17f07949e90bd932ca9abd9e0a3
https://doi.org/10.1109/led.2013.2278816
https://doi.org/10.1109/led.2013.2278816
Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures
Autor:
N. E. Harff, W. E. Baca, H. C. Chui, Jerry A. Simmons, Marc E. Sherwin, M. A. Blount, Mark V. Weckwerth
Publikováno v:
Superlattices and Microstructures. 20:561-567
The epoxy bond and stop-etch (EBASE) technique enables both the frontside and the backside processing of very thin (∼3000A) GaAs/AlGaAs epitaxial layer structures. Using this technique, a conventionally processed epitaxial layer structure is invert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf8cd26f179ec47caa134d2f72e1143c
https://doi.org/10.1006/spmi.1996.0115
https://doi.org/10.1006/spmi.1996.0115
Autor:
George I. Haddad, Pallab Bhattacharya, G. O. Munns, W.L. Chen, Marc E. Sherwin, L. Davis, D. Knightly
Publikováno v:
Journal of Crystal Growth. 136:166-172
It has generally been recognized that sources of the highest purity facilitate growth of loP and InAlAs with excellent optical and electrical characteristics. The mobility, photoluminescence linewidths, X-ray linewidths, impurity levels, and ultimate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e026d73081cb2b88fd3aca5252e62f4
https://doi.org/10.1016/0022-0248(94)90403-0
https://doi.org/10.1016/0022-0248(94)90403-0
Autor:
Marc E. Sherwin, W.L. Chen, George I. Haddad, Youngwoo Kwon, G. O. Munns, T. Brock, Dimitris Pavlidis
Publikováno v:
Journal of Crystal Growth. 127:25-28
The InAlAs/InGaAs high electron mobility transistor offers excellent high frequency, low noise operation for amplifiers. While this material system has been grown primarily by conventional MBE, other growth techniques have been examined for improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e835b6ef218e9f24c774b0699bc78dc
https://doi.org/10.1016/0022-0248(93)90570-m
https://doi.org/10.1016/0022-0248(93)90570-m
Publikováno v:
Journal of Crystal Growth. 127:226-229
The growth of InAlP and related compounds such as InGaP lattice matched to GaAs has attracted a great deal of interest for optoelectronic devices emitting in the range from 638 to 700 nm and for electronic devices such as the heterojunction bipolar t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d70fb878b28948197ef1c32b42e1411b
https://doi.org/10.1016/0022-0248(93)90610-9
https://doi.org/10.1016/0022-0248(93)90610-9
Publikováno v:
Journal of Crystal Growth. 120:162-166
InGaAsP has been grown by CBE at compositions of 1.1, 1.2 and 1.4 μm for the development of MQW-SCH lasers. The observed incorporation coefficients for TMI and TEG show strong temperature sensitivity while the phosphorus and arsenic incorporation be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e4aa022edcfceedd6dabc7397eee0f3
https://doi.org/10.1016/0022-0248(92)90383-t
https://doi.org/10.1016/0022-0248(92)90383-t
Autor:
George I. Haddad, G. O. Munns, Marc E. Sherwin, T. Brock, Youngwoo Kwon, Dimitris Pavlidis, Geok Ing Ng
Publikováno v:
Journal of Crystal Growth. 120:184-188
The lnAlAs/lnGaAs/InP high electron mobility transistor (HEMT) lattice matched to lnP offers excellent high frequency, low noise operation for MMICs and low-noise amplifiers. The lnP channel in the InP/InAlAs HEMT offers the advantages of improved hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::714c862dc995af401c7842dcfeaf1b42
https://doi.org/10.1016/0022-0248(92)90388-y
https://doi.org/10.1016/0022-0248(92)90388-y