Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Marc Cangemi"'
Autor:
Thomas B. Renegar, Marc Cangemi, Russell E. Hajdaj, Theodore V. Vorburger, Alan Zheng, Lei Chen, Ndubuisi G. Orji, Joe Fu, Al Hilton, Aaron Cordes, Mike Hernandez, Ronald G. Dixson, Michael Bishop
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
(8000 ft ) of class 100 space is the anchor of this facility and an integral component of the new Center for Nanoscale Science and Technology (CNST) at NIST. Although the CNST/NanoFab is a nanotechno logy research facility with a different strateg
Autor:
Nicolo Morgana, Michael Cangemi, Marc Cangemi, Leonardus H. A. Leunissen, Vicky Philipsen, Bryan S. Kasprowicz, Rand Cottle, Rudi De Ruyter, Pierre Sixt
Publikováno v:
22nd European Mask and Lithography Conference.
Phase-shift mask (PSM) technology in combination with 193nm illumination remains a viable option for high contrast imaging towards 45nm half-pitch applications. The advent of hyper NA (immersion) lithography increases the imaging sensitivity towards
Publikováno v:
22nd European Mask and Lithography Conference.
Today novel RET solutions are gaining more and more attention from the lithography community that is facing new challenges in attempting to meet the new requirement of the SIA roadmap. Immersion, high NA, polarization, and mask topography, are becomi
Autor:
Wei Wu, Matt Lassiter, Chris Progler, Jonathan L. Cobb, Lloyd C. Litt, Young-Mog Ham, Will Conley, Kevin Lucas, Mike Cangemi, Bernie Roman, Marc Cangemi, Bryan S. Kasprowicz, Rand Cottle, Nicolo Morgana
Publikováno v:
SPIE Proceedings.
Today novel RET solutions are gaining more and more attention from the lithography community that is facing new challenges in attempting to meet the new requirement of the SIA roadmap. Immersion, high NA, polarization, and mask topography, are becomi
Autor:
Will Conley, Nicoló Morgana, Bryan S. Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd C. Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler
Publikováno v:
SPIE Proceedings.
Publikováno v:
SPIE Proceedings.
Intensity imbalance between the 0 and π phase features of c:PSM cause gate CD control and edge placement problems. Strategies such as undercut, selective biasing, and combinations of undercut and bias are currently used in production to mitigate the
Autor:
Marc Cangemi, Lloyd C. Litt, Nicolo Morgana, Michael Cangemi, Christopher J. Progler, Young-Mog Ham, Rand Cottle, Will Conley, Wei Wu, Bernie Roman, Jonathan L. Cobb, Bryan S. Kasprowicz
Publikováno v:
Optical Microlithography XVIII.
Today the industry is filled with intensity-balanced c:PSM and much more focus is being placed on innovative approaches such as CPL (and in conjunction with IML for Contacts) and tunable transmission embedded attenuating phase shift mask (TT-EAPSM).
Autor:
Chris Progler, Young-Mog Ham, Wei Wu, Mark Smith, Lloyd C. Litt, Mike Cangemi, Rusty Carter, Rand Cottle, Bernie Roman, Jonathan L. Cobb, Kevin Lucas, Bryan S. Kasprowicz, Will Conley, Marc Cangemi, Matt Lassiter
Publikováno v:
Optical Microlithography XVIII.
The lithography prognosticator of the early 1980"s declared the end of optics for sub-0.5μm imaging. However, significant improvements in optics, photoresist and mask technology continued through the mercury lamp lines (436, 405 & 365nm) and into la
Publikováno v:
SPIE Proceedings.
Repair of etched quartz defects on AAPSM products negatively affect manufacturability in the mask shop. Currently there are few solutions to repair etched quartz defects, two of these include mechanical removal or a combination of topography mapping