Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Marc C. French"'
Autor:
Marc C. French, Bradley J. Nordell, Anthony N. Caruso, Sean W. King, Han Li, Michelle M. Paquette, William A. Lanford, Donghyi Koh, Erik C. Hadland, Sage R. Bauers, Antonio M. Rudolph, David W. Johnson, Jung Hwan Yum, Patrick E. Hopkins, Liza Ross, Sanjay K. Banerjee, Liyi Li, Patrick Henry, John T. Gaskins, Devin R. Merrill
Publikováno v:
ECS Journal of Solid State Science and Technology. 6:N189-N208
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afaf49b76c3fe7bffc86c0830b12b4d0
https://doi.org/10.1149/2.0091710jss
https://doi.org/10.1149/2.0091710jss
Autor:
Michael Mutch, Xin Liu, Robert J. Nemanich, Markus Kuhn, Corey J. Cochrane, Marc C. French, T. A. Pomorski, Sean W. King, Brad C. Bittel, Benjamin French, Justin S. Brockman, Patrick M. Lenahan
Publikováno v:
Microelectronics Reliability. 63:201-213
The starting point for describing the electrostatic operation of any semiconductor device begins with a band diagram illustrating changes in the semiconductor Fermi level and the alignment of the valence and conduction bands with other interfacing se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11251eb16bc1193ab729a90510cd453f
https://doi.org/10.1016/j.microrel.2016.04.004
https://doi.org/10.1016/j.microrel.2016.04.004
Autor:
Markus Kuhn, Jeff Bielefeld, Milt Jaehnig, Marc C. French, Justin S. Brockman, Benjamin French, Guanghai Xu, Sean W. King
Publikováno v:
Applied Surface Science. 285:545-551
In order to understand the fundamental charge transport in a-B:H and a-BX:H (X = C, N, P) compound heterostructure devices, X-ray photoelectron spectroscopy has been utilized to determine the valence band offset and Schottky barrier present at amorph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ccef67d3ff23bb6ca133087bea3dd2b
https://doi.org/10.1016/j.apsusc.2013.08.090
https://doi.org/10.1016/j.apsusc.2013.08.090
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P250-P253
Due to extreme thermal-mechanical properties, low atomic number (Z), high neutron capture cross section, chemical inertness and low dielectric constant (k), boron and boron compound materials are of interest for numerous applications including neutro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3a3334793d3d9100c257515271a7b02
https://doi.org/10.1149/2.007206jss
https://doi.org/10.1149/2.007206jss
Autor:
B. Colvin, Marc C. French, Danya Jacob, J. Kelly, Dhanadeep Dutta, David W. Gidley, Sean W. King, J. Bielefeld, Ming Liu, D. Vanleuven
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:N115-N122
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0fa067a413e960a9636eab8504f4ccf
https://doi.org/10.1149/2.021206jss
https://doi.org/10.1149/2.021206jss
Publikováno v:
Journal of Non-Crystalline Solids. 357:3602-3615
The absolute concentration of chemical bonds in Plasma Enhanced Chemically Vapor Deposited (PECVD) a-SiC x :H thin films have been determined via combining transmission Fourier-Transform Infra-red (FTIR) spectroscopy with X-ray Reflectivity (XRR) and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5654d50da2d760185cc99415db65984b
https://doi.org/10.1016/j.jnoncrysol.2011.07.004
https://doi.org/10.1016/j.jnoncrysol.2011.07.004
Publikováno v:
Journal of Non-Crystalline Solids. 357:2970-2983
Fourier Transform Infrared (FTIR) Spectroscopy has long been utilized as an analytical technique for qualitatively determining the presence of various different chemical bonds in gasses, liquids, solids, and on surfaces. Most recently, FTIR has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e34a289196ceffb7e4c6b8ba7ddd15d
https://doi.org/10.1016/j.jnoncrysol.2011.04.001
https://doi.org/10.1016/j.jnoncrysol.2011.04.001
Autor:
Sanjay K. Banerjee, Liyi Li, Anthony N. Caruso, Sage R. Bauers, David W. Johnson, William A. Lanford, Sean W. King, Patrick Henry, Devin R. Merrill, Patrick E. Hopkins, Antonio B. Mei, Han Li, Bradley J. Nordell, Liza Ross, Donghyi Koh, John T. Gaskins, Michelle M. Paquette, Jung Hwan Yum, Marc C. French, Erik C. Hadland
Publikováno v:
ECS Journal of Solid State Science and Technology. 7:X3-X3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03ff560d583874884eca73929c061131
https://doi.org/10.1149/2.0331807jss
https://doi.org/10.1149/2.0331807jss
Publikováno v:
Applied Surface Science. :734-737
Secondary ion mass spectrometry (SIMS) has been utilized for many years to measure the dose of ion implants in silicon for the purpose of verifying the ability of ion implantation equipment to accurately and reproducibly implant the desired species a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::980e09847621f3fcfec9780c213e6f23
https://doi.org/10.1016/j.apsusc.2004.03.037
https://doi.org/10.1016/j.apsusc.2004.03.037
Publikováno v:
MRS Proceedings. 1576
In order to understand the fundamental charge transport in a-B4-5C:H/Si heterostructure devices, we have utilized x-ray photoelectron spectroscopy to determine the valence band offset at interfaces formed by Plasma Enhanced Chemical Vapor Deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e22a2b8ff9cdd8992d4bb6da3a59ef8e
https://doi.org/10.1557/opl.2013.1067
https://doi.org/10.1557/opl.2013.1067