Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Marc A. Bergendahl"'
Autor:
I. Ok, Samuel S. Choi, Riduan Khaddam-Aljameh, Scott C. Lewis, Charles Mackin, Wilfried Haensch, Kevin W. Brew, Victor Chan, F. Lie, Alexander Friz, Stefano Ambrogio, Marc A. Bergendahl, James J. Demarest, Geoffrey W. Burr, Akiyo Nomura, Atsuya Okazaki, Katie Spoon, Takeo Yasuda, Masatoshi Ishii, Nicole Saulnier, Ishtiaq Ahsan, Pritish Narayanan, Hsinyu Tsai, Vijay Narayanan, Hiroyuki Mori, Y. Kohda, Kohji Hosokawa
Publikováno v:
IEEE Transactions on Electron Devices. 68:6629-6636
Hardware acceleration of deep learning using analog non-volatile memory (NVM) requires large arrays with high device yield, high accuracy Multiply-ACcumulate (MAC) operations, and routing frameworks for implementing arbitrary deep neural network (DNN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8d47a1ee53bb906bdde9b10caecdc5a
https://doi.org/10.1109/ted.2021.3115993
https://doi.org/10.1109/ted.2021.3115993
Autor:
Katsuyuki Sakuma, Roy Yu, Michael Belyansky, Marc A Bergendahl, Juan-Manuel Gomez, Spyridon Skordas, John Knickerbocker, Dale McHerron, Ming Li, Yiu Ming Cheung, Siu Cheung So, So Ying Kwok, Chun Ho Fan, Siu Wing Lau
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e9e73ef0437c5b113c48d69bc41d39f
https://doi.org/10.1109/ectc51906.2022.00058
https://doi.org/10.1109/ectc51906.2022.00058
Autor:
Kamal K. Sikka, Hiroyuki Mori, Hongqing Zhang, Ravi K. Bonam, Risa Miyazawa, Keiji Matsumoto, Marc A. Bergendahl, Takashi Hisada, Aakrati Jain, Dario L. Goldfarb, Dishit P. Parekh, Ed Cropp, Saraf Iqbal Rashid
Publikováno v:
2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm).
In a previous study [1], the authors have investigated stacked silicon microcoolers and quantified their thermal performance envelope in a separable format where the microcooler is attached to an electronic package lid with an intervening TIM2. In th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69c443acf3198537049b6a613d530acf
https://doi.org/10.1109/itherm51669.2021.9503180
https://doi.org/10.1109/itherm51669.2021.9503180
Autor:
Maryse Cournoyer, Hiroyuki Mori, Ravi K. Bonam, Marc A. Bergendahl, Paul S. Andry, Dishit P. Parekh, Isabel de Sousa, Kamal K. Sikka, Aakrati Jain, Pascale Gagnon, Rama Divakaruni, Thomas A. Wassick, Ed Cropp, Hongqing Zhang, Yang Liu, Sayuri Kohara, Catherine Dufort
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
We introduce a new packaging technology termed as Direct Bonded Heterogeneous Integration (DBHi) where a Si-bridge is directly bonded to and in between processor chips using Cu pillars, allowing high-bandwidth low-latency low-power communication betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::960ccc6b8b26dfdd3b11d507ce84411f
https://doi.org/10.1109/ectc32696.2021.00034
https://doi.org/10.1109/ectc32696.2021.00034
Autor:
Mark Christian Mueller, Jeroen van Borkulo, Kees Biesheuvel, Roman Doll, Dishit P. Parekh, Juan-Manuel Gomez, Kamal K. Sikka, Aakrati Jain, Marc A. Bergendahl
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
The recently introduced Direct Bonded Heterogeneous Integration (DBHi) Si bridge technology has chips connected by a bridge housed inside a cavity or trench that is precisely machined in the chip-carrier laminate. The size, thickness, and placement c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b56f3ffb798a898fa44912828a0d70b9
https://doi.org/10.1109/ectc32696.2021.00184
https://doi.org/10.1109/ectc32696.2021.00184
Publikováno v:
2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm).
With increasing processing capability and power consumption in multi-layered micro-electronic packages, efficient thermal management and structural integrity continue to remain crucial factors for ensuring package reliability. Effective and simple to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::794bae518a69d422dd22ae4d750edfc0
https://doi.org/10.1109/itherm51669.2021.9503285
https://doi.org/10.1109/itherm51669.2021.9503285
Publikováno v:
2021 20th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm).
Using silicon for microcooler fabrication is advantageous over metals as it can be micromachined for smaller fin wall and channel width dimensions, increasing the thermal heat transfer coefficient [1], [2]. Since the fin height is limited by the wafe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81f4d1bb7ffead46a6ff872f6030b918
https://doi.org/10.1109/itherm51669.2021.9503164
https://doi.org/10.1109/itherm51669.2021.9503164
Autor:
Keiji Matsumoto, Hiroyuki Mori, Sayuri Kohara, Marc A. Bergendahl, Kamal K. Sikka, Takashi Hisada
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
The recently introduced Direct Bonded Heterogeneous Integration (DBHi) Si bridge technology [1] consists of chips directly connected by a bridge chip though Cu pillars, enabling high speed and high band-width communication between CPUs, GPUs and memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70a36e225d53777abecb0f4f4b24ba88
https://doi.org/10.1109/ectc32696.2021.00222
https://doi.org/10.1109/ectc32696.2021.00222
Autor:
A. Gaul, Andrew M. Greene, T. Levin, Dallas Lea, Victor Chan, Samuel S. Choi, Carol Boye, S. Mattam, J. S. Strane, Sean Teehan, Dechao Guo, Gauri Karve, Marc A. Bergendahl, Brad Austin, Kangguo Cheng
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:393-399
We detail the use of ring oscillators (ROs) for yield learning during the research phase of a CMOS technology generation. Failing circuits are located and classified based on electrical analysis of ROs and FETs (Field Effect Transistor) wired out fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb346177db8ff7cde9e74ff311de6222
https://doi.org/10.1109/tsm.2019.2945696
https://doi.org/10.1109/tsm.2019.2945696
Autor:
Samuel S. Choi, Jay W. Strane, Victor Chan, Sean Teehan, James Chingwei Li, C. Le, James J. Demarest, Marc A. Bergendahl, A. Gaul, Dechao Guo, Andrew M. Greene
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Ring Oscillators (ROs) are used for yield learning during the research phase of a CMO technology. We performed cross-sections and showed that the open and short defects are in the middle of line (MOL) gate structures. The defects which are related to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e8a90f167b681b32d0a241ede4550e
https://doi.org/10.1109/asmc49169.2020.9185254
https://doi.org/10.1109/asmc49169.2020.9185254