Výsledky vyhledávání - "Maoyuan Zheng"

Epitaxial growth of ZrSe2 nanosheets on sapphire via chemical vapor deposition for optoelectronic application

Autor: Gaokai Wang, Ji Jiang, Yan Tian, Maoyuan Zheng, Zhigang Yin, Xingxing Li, Xingwang Zhang, Jing Qi, Yong Cheng, Jingren Chen

Publikováno v: Journal of Materials Chemistry C. 9:13954-13962

Group IVB (Zr and Hf) transition metal dichalcogenides (TMDs) have attracted considerable attention due to their predicted excellent electronic properties that are superior to group VIB TMDs. However, the synthesis of high-quality ZrSe2 layers is sel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f80b23c5978e55410affd88c023c9bce
https://doi.org/10.1039/d1tc03339e

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Domain matching epitaxy stabilized metastable, tetragonal BiFeO3 on symmetry-mismatched c-plane ZnO

Autor: Yajuan Zhao, Zhigang Yin, Xingxing Li, Maoyuan Zheng, Yong Cheng, Jinliang Wu, Xingwang Zhang

Publikováno v: Japanese Journal of Applied Physics. 61:025501

We report the stabilization of metastable tetragonal BiFeO3 epilayer on ZnO(0001) surface. X-ray reciprocal space map characterizations show that the BiFeO3 film is of true tetragonal symmetry, but not the commonly observed monoclinic structure. The

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::994aeca9f3b11c5e1a40683830f61280
https://doi.org/10.35848/1347-4065/ac45a6

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Stabilization of thick, rhombohedral Hf0.5Zr0.5O2 epilayer on c-plane ZnO

Autor: Jing Qi, Maoyuan Zheng, Jinliang Wu, Zhigang Yin, Xingwang Zhang, Yong Cheng

Publikováno v: Applied Physics Letters. 119:172904

Metastable rhombohedral hafnia-based ferroelectric films are emerging as a promising candidate in ferroelectric nonvolatile memory technologies, but the limited critical thickness impedes their applications. Herein, a 35-nm-thick rhombohedral Hf0.5Zr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6536a989952784090ab50ea3f91b30dc
https://doi.org/10.1063/5.0064113

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Persistent spin texture in tetragonal BiFeO3

Autor: Jing Qi, Maoyuan Zheng, Yong Cheng, Jinliang Wu, Zhigang Yin, Xingwang Zhang

Publikováno v: Japanese Journal of Applied Physics. 60:050906

We report the existence of bulk persistent spin texture in P4mm tetragonal BiFeO3, a ferroelectric with ultrahigh spontaneous polarization. Our density functional theory calculations reveal that tetragonal BiFeO3 exhibits sufficiently strong spin–o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::957c882a8ad987dc7262d100dd812be5
https://doi.org/10.35848/1347-4065/abf949

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Resistive switching behaviors and mechanisms of HfS2 film memory devices studied by experiments and density functional theory calculations

Autor: Deyan He, Guangan Zhang, Naifeng Li, Yingtao Li, Jing Qi, Haifeng Sun, Qi Wang, Maoyuan Zheng, Jiatai Wang, Junjie Hu, Sihao Ye, Yue Wang

Publikováno v: Applied Physics Letters. 116:063503

Energy band diagrams are widely utilized to explain the switching mechanism of resistance random access memory (RRAM). However, a precise and quantitative band theory is still lacking in this field. Although HfS2 has good applications in many fields

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b0517a6a91e7e8c26d94bc710c35e816
https://doi.org/10.1063/1.5131377

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