Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Maor Tiferet"'
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Abstract We report here on focusing of a probe IR (λ = 1.55 μm) laser beam in silicon. The focusing is done by a second pump laser beam, at λ = 0.775 μm and 30 ps pulse width, with a donut shape that is launched collinearly and simultaneously (wi
Externí odkaz:
https://doaj.org/article/8457016eb5384d95baa4ca88f872677f
Publikováno v:
Scientific reports. 12(1)
We report here on focusing of a probe IR (λ = 1.55 μm) laser beam in silicon. The focusing is done by a second pump laser beam, at λ = 0.775 μm and 30 ps pulse width, with a donut shape that is launched collinearly and simultaneously (with some d
Publikováno v:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXV.
In this paper we introduce a novel method of making micro-waveguides on silicon surface by the use of the Zone Refining Method. We produce the melting zone by a laser beam focused on the surface of a doped silicon slab to create a melting spot on its
Publikováno v:
Nanoscale Imaging, Sensing, and Actuation for Biomedical Applications XVII.
In previous work we demonstrated a new method for shaping of pulsed IR (λ=1.55μm) laser probe beam in silicon. The shaping was done by a second pump pulsed laser beam at 0.532μm and 17ns pulse width which simultaneously and collinearly, illuminate
Publikováno v:
Frontiers in Optics / Laser Science.
We demonstrate the shaping and focusing of a probe IR (λ=1.55μm) laser beam in silicon. The shaping was done by a second pump laser beam at λ=0.775μm and 30ps pulse width which simultaneously and collinearly, illuminates the silicon surface with
Autor:
Zeev Zalevsky, Moshe Sinvani, Omer Wagner, Hadar Pinhas, Meir Danino, Yossef Danan, Maor Tiferet
Publikováno v:
Nanoscale Imaging, Sensing, and Actuation for Biomedical Applications XVI.
In this paper we present a new method for shaping of a pulsed IR (λ=1550 nm) laser beam in silicon. The shaping is based on plasma dispersion effect (PDE). The shaping is done by a second pulsed pump laser beam at 532 nm which simultaneously and col
Publikováno v:
Imaging and Applied Optics 2019 (COSI, IS, MATH, pcAOP).
Enhanced laser beam shaping for super-resolved imaging in silicon is demonstrated by applying pico-seconds pulsed pump at 775nm having increased penetration-depth into the silicon (than pump at 532nm) and yielding sharper PSF due to reduced diffusion