SiC Trench MOSFET With Shielded Fin-Shaped Gate to Reduce Oxide Field and Switching Loss

Autor: Maolong Ke, Philip Mawby, Ian Deviny, Huaping Jiang, Xiaoping Dai, Jin Wei

Publikováno v: IEEE Electron Device Letters. 37:1324-1327

A silicon carbide shielded fin-shaped gate metal–oxide–semiconductor field effect transistor (SF-MOS) is proposed in this letter, which utilizes a well-grounded p-region to shield the fin-shaped trench gate. Numerical simulations by Sentaurus TCA

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9fce44c72c38622d1fbf97577f36ddf7
https://doi.org/10.1109/led.2016.2599921

Improved surge current capability of power diode with copper metallization and heavy copper wire bonding

Autor: Huaping Jiang, Haihui Luo, Daohui Li, Guoyou Liu, Maolong Ke, Xiaoping Dai, Ian Deviny

Publikováno v: 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe).

Copper metallization and copper wire bonding of high power semiconductor devices have attracted growing attention in recent years due to potentially much improved reliability and increased lifetime. However, significant technical challenges still rem

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a16cc45fc1460d7c7cfa979b3516f83a
https://doi.org/10.1109/epe.2016.7695362

WR-3 Band Waveguides and Filters Fabricated Using SU8 Photoresist Micromachining Technology

Autor: Yi Wang, Maolong Ke, Xiaobang Shang, Michael J. Lancaster

Publikováno v: IEEE Transactions on Terahertz Science and Technology. 2:629-637

This paper demonstrates a two-layer SU8 photoresist micromachining technology that has similar performance to conventionally machined metal. The technology is demonstrated in the WR-3 band (220-325 GHz). Three different WR-3 band circuits, namely a W

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1edb29319f8f5fd8d43da61e73f7f33d
https://doi.org/10.1109/tthz.2012.2220136

Design and realisation of low loss air-filled rectangular coaxial cable with bent quarter-wavelength supporting stubs

Autor: Michael J. Lancaster, Maolong Ke, Yi Wang

Publikováno v: Microwave and Optical Technology Letters. 50:1443-1446

A new type of rectangular coaxial cable, operating from 28 to 48 GHz, was designed and fabricated with thick SU8 photoresist technology. Two pairs of bent quarter-wavelength supporting stubs were proposed to reduce the lateral dimension of the struct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ef0b21ec8ee29e06d6c8b201e5136cf
https://doi.org/10.1002/mop.23377

Permittivity and loss characteristics of SU8-quartz composite photoresist at THz frequencies

Autor: Maolong Ke, Jung-Mu Kim, M. Espinosa-Espinosa, Ignacio Llamas-Garro, Michael J. Lancaster, Marcos T. de Melo

Publikováno v: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
r-CTTC. Repositorio Institucional Producción Científica del Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)
instname
r-CTTC: Repositorio Institucional Producción Científica del Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)
Centre Tecnològic de Telecomunicacions de Catalunya (CTTC)

An SU8-quartz composite photoresist has been fabricated and characterized from 1.2 to 1.4 THz; the material contains quartz particles from 0 to 50 wt%. The composite can reduce the inherent losses of SU8 photoresist at terahertz frequencies. Calculat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::116af50108cf7566725b8a44f4b91592
https://doi.org/10.1002/mop.30041