Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Maolin Pan"'
Autor:
Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu
Publikováno v:
IEEE Access, Vol 12, Pp 16089-16094 (2024)
This article systematically studies the AlGaN/GaN MIS-HEMTs using the O2 plasma alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) analyses and capacitance-voltage (C-V) measurement results show that the density
Externí odkaz:
https://doaj.org/article/04e1f1e0df6d4795934cd79e7a46f822
Autor:
Xinling Xie, Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Hai Huang, Xin Hu, Min Xu
Publikováno v:
Nanomaterials, Vol 14, Iss 6, p 523 (2024)
The Vth stability and gate reliability of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O2 plasma treatment were systematically investigated in this article. It was found that the conducti
Externí odkaz:
https://doaj.org/article/1ad98f2fa084483c8e9552bda175cf85
Autor:
Luyu Wang, Penghao Zhang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Xin Sun, Ziqiang Huang, Kun Chen, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Chunlei Wu, Chen Wang, Min Xu, David Wei Zhang
Publikováno v:
Nanomaterials, Vol 13, Iss 16, p 2275 (2023)
A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication. This process is composed of a self-limited surface modification ste
Externí odkaz:
https://doaj.org/article/c269635060744d2b937892ecbee1ede6
Autor:
Penghao Zhang, Luyu Wang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Ziqiang Huang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang
Publikováno v:
Micromachines, Vol 14, Iss 8, p 1523 (2023)
A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation l
Externí odkaz:
https://doaj.org/article/96de62bc655e48d4835ef462ee2e19f7
Autor:
Yannan Yang, Rong Fan, Penghao Zhang, Luyu Wang, Maolin Pan, Qiang Wang, Xinling Xie, Saisheng Xu, Chen Wang, Chunlei Wu, Min Xu, Jian Jin, David Wei Zhang
Publikováno v:
Micromachines, Vol 14, Iss 7, p 1278 (2023)
In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al2O3
Externí odkaz:
https://doaj.org/article/93a9ab6c62aa4233b9563f01b6ed81b3
Publikováno v:
IEEE Access, Vol 8, Pp 170862-170871 (2020)
In business process collaboration (BPC), especially when it comes to message communication and data exchange, there are complex data dependencies among sender process, receiver process and messages. However, each participant of the overall BPC develo
Externí odkaz:
https://doaj.org/article/611c639b3fd74f399ea95aa39eb0fd53
Autor:
Penghao Zhang, Luyu Wang, Kaiyue Zhu, Yannan Yang, Rong Fan, Maolin Pan, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang
Publikováno v:
Micromachines, Vol 13, Iss 4, p 589 (2022)
A systematic study of the selective etching of p-GaN over AlGaN was carried out using a BCl3/SF6 inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a p-GaN etch rate of 3.4 nm/min was
Externí odkaz:
https://doaj.org/article/3bf45b27f6414f1d9265995beaf0d160
Publikováno v:
Discrete Dynamics in Nature and Society, Vol 2014 (2014)
When the spatial location area increases becoming extremely large, it is very difficult, if not possible, to evaluate the covariance matrix determined by the set of location distance even for gridded stationary Gaussian process. To alleviate the nume
Externí odkaz:
https://doaj.org/article/735a3d91cf374faf8d3f5b0031dac436
Publikováno v:
Statistics and Computing. 33
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089789bb32b2ac1b138ffc35b3338023
https://doi.org/10.1007/s11222-023-10232-4
https://doi.org/10.1007/s11222-023-10232-4
Publikováno v:
Computational Intelligence and Neuroscience. 2022:1-14
Crowdsourcing has become a new distributed paradigm, which uses online crowds to solve complex problems. Recently, in order to reduce the development workload and research threshold of crowdsourcing applications, crowdsourcing process modeling is att
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e02e0285d600cf92c67078804b8d8000
https://doi.org/10.1155/2022/9496741
https://doi.org/10.1155/2022/9496741