Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Maojiu Luo"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:6313-6320
We studied the avalanche failure mechanism of a 1.2-kV 40-A monolithic junction barrier-controlled Schottky-diode-integrated SiC MOSFET (JMOS) using a single-pulse unclamped inductive switching (UIS) test to evaluate its avalanche ruggedness. The ava
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b05be6914bad42e861d30183bb307d9e
https://doi.org/10.1109/ted.2021.3122929
https://doi.org/10.1109/ted.2021.3122929
Publikováno v:
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a7c40e4a3c0346038cccb35ec2197c1
https://doi.org/10.1109/icsict55466.2022.9963347
https://doi.org/10.1109/icsict55466.2022.9963347
Autor:
Maojiu Luo, Yourun Zhang, Xiao Yang, Song Bai, Kunlin Li, Bo Zhang, Hang Chen, Luo Jiamin, Zhong Wei
Publikováno v:
IEEE Transactions on Electron Devices. 67:4027-4032
In this article, the failure mechanism of a 1.2-kV monolithic junction barrier-controlled Schottky diode integrated silicon carbide metal–oxide–semiconductor field-effect transistor (JMOS) under short-circuit (SC) tests has been investigated by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3248663071276d9add087ad1058e97a
https://doi.org/10.1109/ted.2020.3017337
https://doi.org/10.1109/ted.2020.3017337
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ac71bfdb3f964908f6c864eeec7a6dc
https://doi.org/10.1109/edtm53872.2022.9798027
https://doi.org/10.1109/edtm53872.2022.9798027
Publikováno v:
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f80c64f731971803e4f019ffffa6237f
https://doi.org/10.1109/edtm53872.2022.9798229
https://doi.org/10.1109/edtm53872.2022.9798229
Publikováno v:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
In this work, we propose a novel 4H-SiC PiN diode to improve the forward current conduction ability. The new PiN structure features floating p-type buried regions in 30-μm thick N-type drifter layer. Formula derivation and TCAD numerical simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::035d831bd3d476ab62af5e553492324e
https://doi.org/10.1109/sslchinaifws51786.2020.9308839
https://doi.org/10.1109/sslchinaifws51786.2020.9308839
Autor:
Yourun Zhang, Bo Zhang, Hang Chen, Hong Chen, Juntao Li, Wen Wang, Xiaochuan Deng, Yun Bai, Maojiu Luo
Publikováno v:
Semiconductor Science and Technology. 34:045001
A silicon carbide bipolar junction transistor with novel emitter field plate (EFP-BJT) design is proposed in this paper. The fabricated EFP-BJT features a metal plate of the extending emitter electrode with a 50-nanometer-thick oxide layer overlapped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a99d7948a9b7ce9af55cddd9f7a137e1
https://doi.org/10.1088/1361-6641/ab032c
https://doi.org/10.1088/1361-6641/ab032c