Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Mao-Bin Li"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 591-598 (2021)
This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions. The method is validated via two-dimensional numerical simulations
Externí odkaz:
https://doaj.org/article/5455cc83db2541b48cdcbca671e53cae
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 591-598 (2021)
This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions. The method is validated via two-dimensional numerical simulations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6342af8132298de804f8ec33e258fb1c
https://doi.org/10.1109/jeds.2021.3084797
https://doi.org/10.1109/jeds.2021.3084797