Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Manyu Dang"'
Autor:
Nicolas G. N. Constantino, Muhammad Shahbaz Anwar, Oscar W. Kennedy, Manyu Dang, Paul A. Warburton, Jonathan C. Fenton
Publikováno v:
Nanomaterials, Vol 8, Iss 6, p 442 (2018)
Superconducting nanowires undergoing quantum phase-slips have potential for impact in electronic devices, with a high-accuracy quantum current standard among a possible toolbox of novel components. A key element of developing such technologies is to
Externí odkaz:
https://doaj.org/article/2aa8de003cc84a4285179c1964b5fe64
Publikováno v:
Journal of Materials Chemistry A. 9:6232-6241
Solid polymer electrolytes (SPEs) that can work over a wide temperature range are highly desired to accelerate the commercial applications of solid lithium metal batteries (SLMBs). Herein, novel SPEs were fabricated via the in situ polymerization and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6315d31be23bd9c5339a2e8b23e0a86f
https://doi.org/10.1039/d0ta10932k
https://doi.org/10.1039/d0ta10932k
Autor:
Richard Brown, Bogdan Petrin Ratiu, Hui Jia, Khalifa M. Azizur-Rahman, Manyu Dang, Mingchu Tang, Baolai Liang, Huiyun Liu, Qiang Li
Publikováno v:
Journal of Crystal Growth. 598:126860
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d8f73ddca929a27ebaa7ba58319140
https://doi.org/10.1016/j.jcrysgro.2022.126860
https://doi.org/10.1016/j.jcrysgro.2022.126860
Autor:
Xuezhe Yu, Zizhuo Liu, Huiwen Deng, Pamela Jurczak, Huan Wang, Siming Chen, Huiyun Liu, Ana M. Sanchez, Richard Beanland, Manyu Dang, Ying Lu, Jin-Chuan Zhang, Peter Michael Smowton, Junjie Yang, Hui Jia, Alwyn J. Seeds, Mingchu Tang, Keshuang Li, Wei Li, Xiaodong Han, Fengqi Liu, Jae Seong Park
Publikováno v:
Emerging Applications in Silicon Photonics II.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcba29eca6d7ab41a0165d3fe978f5d7
https://doi.org/10.1117/12.2601451
https://doi.org/10.1117/12.2601451
Publikováno v:
2021 IEEE Photonics Society Summer Topicals Meeting Series (SUM).
Inversion boundaries (IBs) are charged planer defects that arise from the growth of polar III-V materials on non-polar Si (001) substrate. This paper demonstrates a novel technique to achieve all-MBE grown, IB-free GaAs on on-axis Si (001) substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b917bbe104ab9ef0bb504166c878d3de
https://doi.org/10.1109/sum48717.2021.9505863
https://doi.org/10.1109/sum48717.2021.9505863
Autor:
Jin-Chuan Zhang, Wei Li, Xuezhe Yu, Junjie Yang, Jae Seong Park, Ying Lu, Fengqi Liu, Alwyn J. Seeds, Ana M. Sanchez, Xiaodong Han, Zizhuo Liu, Huan Wang, Huiyun Liu, Richard Beanland, Huiwen Deng, Mingchu Tang, Peter Michael Smowton, Siming Chen, Pamela Jurczak, Hui Jia, Keshuang Li, Manyu Dang
Monolithic integration of III–V materials and devices on CMOS compatible on‐axis Si (001) substrates enables a route of low‐cost and high‐density Si‐based photonic integrated circuits. Inversion boundaries (IBs) are defects that arise from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f1bb064d4123e035e9862a9fec9002e
https://orca.cardiff.ac.uk/id/eprint/135384/1/adom.202000970.pdf
https://orca.cardiff.ac.uk/id/eprint/135384/1/adom.202000970.pdf
Autor:
Junjie Yang, Huiyun Liu, Siming Chen, Hui Jia, Huiwen Deng, Keshuang Li, Mingchu Tang, Manyu Dang, Pamela Jurczak
Publikováno v:
Journal of Physics D: Applied Physics. 53:485104
The application of GeSn is extended to semiconductor lasers thanks to its band engineering via Sn composition and strain manipulation. As one of the strain engineering methods, thermal annealing, however, is not yet being widely adopted by the majori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bcb13a9fc1aa960f5b3a7eda11b0540b
https://doi.org/10.1088/1361-6463/abae94
https://doi.org/10.1088/1361-6463/abae94
Autor:
Ying Lu, Zizhuo Liu, Mingchu Tang, Siming Chen, Jae Seong Park, Manyu Dang, Mengya Liao, Huiyun Liu
Publikováno v:
Asia Communications and Photonics Conference 2016.
Monolithic III-V materials grown on Si is a promising platform for silicon photonics. Here, by investigating the laser performance of two conventional III-V quantum structures on Si, namely quantum-dots and quantum-well, we unambiguously demonstrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe8b8ef9f28690048ba719f7b153e28
https://doi.org/10.1364/acpc.2016.ath2f.1
https://doi.org/10.1364/acpc.2016.ath2f.1