Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Manyam Pilla"'
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This paper presents the design and measurement of a two-stage, 2 - 20 GHz GaN MMIC power amplifier fabricated on 100µm silicon carbide using Qorvo's QGaN15 released process. A non-uniform distributed power amplifier architecture with a decade bandwi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a696d3df9f1a36667b7e340c21b10c20
https://doi.org/10.1109/ims30576.2020.9223951
https://doi.org/10.1109/ims30576.2020.9223951
Publikováno v:
2020 IEEE/MTT-S International Microwave Symposium (IMS).
This paper presents the design and measurement of a two-stage, 2 - 20 GHz GaN MMIC power amplifier fabricated on 100 µm silicon carbide using Qorvo's QGaN15 released process. A two-stage non-uniform distributed power amplifier having decade bandwidt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05b879a9f30fe95228a6fce15f3205d2
https://doi.org/10.1109/ims30576.2020.9223886
https://doi.org/10.1109/ims30576.2020.9223886
Autor:
Mingda Zhu, S. M. Islam, Wenshen Li, Manyam Pilla, Zongyang Hu, Xiang Gao, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Kevin Lee
Publikováno v:
IEEE Transactions on Electron Devices. 65:2558-2564
GaN vertical trench-MOSFETs incorporating molecular beam epitaxy (MBE) regrown channel are developed and investigated. The channel regrowth by MBE prevents repassivation of the p-type GaN body while promising higher channel mobility. Two different de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efe17d5060da15460c80fd82ee4ff0b8
https://doi.org/10.1109/ted.2018.2829125
https://doi.org/10.1109/ted.2018.2829125
Publikováno v:
IEEE Transactions on Electron Devices. 64:1635-1641
We present the design principle and experimental demonstrations of GaN trench junction-barrier-Schottky-diodes(trench JBSDs), where the Schottky contact within the patterned trenches is at the same plane as the adjacent p-n junctions. Assisted by the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d08d42bfa027bcf1bce89eb62f4aca
https://doi.org/10.1109/ted.2017.2662702
https://doi.org/10.1109/ted.2017.2662702
Autor:
Anton L. Geiler, Edward Beam, Michael Geiler, Yu Cao, Andy Xie, M.D. Roach, Manyam Pilla, Douglas Linkhart, C. Lee, Yongjie Cui, Andrew Ketterson, Lee Burns
Publikováno v:
DRC
Monolithic microwave integrated circuit (MMIC) transit/receive (T/R) modules are widely used in radar and communication systems. The transmitter and receiver usually share the same antenna either by a high frequency switch or a magnetic circulator. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::349ea12e4d1dd2e94744effd8fccd41f
https://doi.org/10.1109/drc46940.2019.9046448
https://doi.org/10.1109/drc46940.2019.9046448
Autor:
Wenshen Li, Kazuki Nomoto, Manyam Pilla, Zongyang Hu, Mingda Zhu, Huili Grace Xing, Debdeep Jena, Xiang Gao
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
The effect of polarization induced (Pl)-doping in GaN buried p-type layer on reverse blocking is studied for the first time. Forward and reverse I-V characteristics is measured on n-p-n diodes. With PI-doping in the buried p-type layer, the reverse p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9054531defbff8e35f7b69235fd15bca
https://doi.org/10.1109/ispsd.2018.8393644
https://doi.org/10.1109/ispsd.2018.8393644
Autor:
Zongyang Hu, Manyam Pilla, Kevin Lee, Debdeep Jena, Huili Grace Xing, Mingda Zhu, S. M. Islam, Xiang Gao, Wenshen Li, Kazuki Nomoto
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
GaN vertical power transistors have gained increasing interest in recent years due to the advantages over lateral transistors in high voltage/high current applications. To date, two major topologies have been studied most: gate-on-epi-surface (GoE) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b788516d0ca6ccfa7c19f1e4705f1ce
https://doi.org/10.1109/drc.2017.7999414
https://doi.org/10.1109/drc.2017.7999414
Autor:
Manyam Pilla, Debdeep Jena, Xiang Gao, Mingda Zhu, Zongyang Hu, Huili Grace Xing, Kazuki Nomoto, Wenshen Li
Publikováno v:
2017 75th Annual Device Research Conference (DRC).
GaN vertical power devices have many advantage over lateral device in device scaling, reliability and thermal management, etc. Traditional power transistors employ p-type pockets to achieve E-mode, RESURF and avalanche capabilities. However, this top
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a4fcc515915dae434dbd0e06e3eaaa7
https://doi.org/10.1109/drc.2017.7999511
https://doi.org/10.1109/drc.2017.7999511
Autor:
Kazuki Nomoto, Sergei Rouvimov, Mingda Zhu, Jinqiao Xie, Wenshen Li, Aditya Sundar, Huili Grace Xing, Manyam Pilla, Zongyang Hu, Debdeep Jena, Kevin Lee, Edward Beam, Xiang Gao
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCD15
GaN PolarMOS is a vertical power transistor incorporating the unique polarization-induced bulk doping scheme in III-nitrides for the body p-n junction. We report the realization of this device, wherein the vertical channel, source contact, and body c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95abb084043da1f167a419952a3ed6b4
https://doi.org/10.7567/1347-4065/ab0f1b
https://doi.org/10.7567/1347-4065/ab0f1b
Autor:
Huili Grace Xing, Debdeep Jena, Mingda Zhu, S. M. Islam, Manyam Pilla, Jinqiao Xie, Xiang Gao, Kazuki Nomoto, Wenshen Li, Zongyang Hu, Kevin Lee
Publikováno v:
Applied Physics Letters. 113:062105
Thermal activation of buried p-type GaN is investigated in metal-organic chemical vapor deposition-regrown vertical structures, where the buried p-GaN is re-passivated by hydrogen during regrowth. The activation is performed by exposing the buried p-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58f60b192bd5aa788afd7d6db9416aa5
https://doi.org/10.1063/1.5041879
https://doi.org/10.1063/1.5041879