Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Manveer S. Munde"'
Publikováno v:
Frontiers in Physics, Vol 7 (2019)
Dielectric oxide films in electronic devices undergo significant structural changes during device operation under bias. These changes are usually attributed to aggregation of oxygen vacancies resulting in formation of oxygen depleted regions and cond
Externí odkaz:
https://doaj.org/article/020bdb54bbf643758361e23504dea313
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 29(24)
Using density functional theory (DFT) calculations, we investigated oxygen vacancy diffusion and aggregation in relation to dielectric breakdown in amorphous silicon dioxide (a-SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::7a66a5026f49bdaa8bcc9f1c35357201
https://pubmed.ncbi.nlm.nih.gov/28504974
https://pubmed.ncbi.nlm.nih.gov/28504974