Zobrazeno 1 - 10
of 136
pro vyhledávání: '"Manus, S."'
Autor:
Forster, F., Petersen, G., Manus, S., Hänggi, P., Schuh, D., Wegscheider, W., Kohler, S., Ludwig, S.
Publikováno v:
Phys. Rev. Lett. 112, 116803 (2014)
Controlling coherent interaction at avoided crossings is at the heart of quantum information processing. The regime between sudden switches and adiabatic transitions is characterized by quantum superpositions that enable interference experiments. Her
Externí odkaz:
http://arxiv.org/abs/1309.5907
Publikováno v:
Phys. Rev. B 82, 195310 (2010)
Time-resolved electron dynamics in coupled quantum dots is directly observed by a pulsed-gate technique. While individual gate voltages are modulated with periodic pulse trains, average charge occupations are measured with a nearby quantum point cont
Externí odkaz:
http://arxiv.org/abs/1006.5554
We apply a pump- and probe-scheme to coplanar stripline circuits to investigate the photocurrent response of GaAs photoswitches in time and space. We find a displacement current pulse, as has been reported earlier. A time-delayed second pulse is inte
Externí odkaz:
http://arxiv.org/abs/1005.1796
Autor:
Hof, K. -D., Rossler, C., Manus, S., Kotthaus, J. P., Holleitner, A. W., Schuh, D., Wegscheider, W.
We report on a photoconductive gain in semiconductor quantum wires which are lithographically defined in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as maxima
Externí odkaz:
http://arxiv.org/abs/0810.0970
Autor:
Hof, K. -D., Rossler, C., Manus, S., Kotthaus, J. P., Holleitner, A. W., Schuh, D., Wegscheider, W.
We report on a dynamic photoconductive gain effect in quantum wires which are lithographically fabricated in an AlGaAs/GaAs quantum well via a shallow-etch technique. The effect allows resolving the one-dimensional subbands of the quantum wires as ma
Externí odkaz:
http://arxiv.org/abs/0806.1110
Autor:
Rossler, C., Hof, K. -D., Manus, S., Ludwig, S., Kotthaus, J. P., Simon, J., Holleitner, A. W., Schuh, D., Wegscheider, W.
Publikováno v:
Appl. Phys. Lett. 93, 071107 (2008)
We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse of the dev
Externí odkaz:
http://arxiv.org/abs/0805.2230
Publikováno v:
Applied Physics Letters, Vol. 83, No. 25, pp. 5235-5237, 22 December 2003
We demonstrate the use of a piezoelectric actuator to apply, at low temperatures, uniaxial stress in the plane of a two-dimensional electron system confined to a modulation-doped AlAs quantum well. Via the application of stress, which can be tuned in
Externí odkaz:
http://arxiv.org/abs/cond-mat/0411740
We present measurements on nanomechanical resonators machined from Silicon-on-Insulator substrates. The resonators are designed as freely suspended Au/Si beams of lengths on the order of 1 - 4 um and a thickness of 200 nm. The beams are driven into n
Externí odkaz:
http://arxiv.org/abs/cond-mat/9910334
Autor:
Haubrich, A. G. C., Wharam, D. A., Kriegelstein, H., Manus, S., Lorke, A., Gossard, A. C., Kotthaus, J. P.
We present the results of high-frequency mixing experiments performed upon parallel quantum point-contacts defined in the two-dimensional electron gas of an Al_{x}Ga_{1-x}As/GaAs-heterostructure. The parallel geometry, fabricated using a novel double
Externí odkaz:
http://arxiv.org/abs/cond-mat/9705308
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