Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Manuela Sotgia"'
Autor:
Manuela Sotgia, Walter Ciccognani, Alessandro Salvucci, Ernesto Limiti, M. Vittori, Rocco Giofre, M. Cirillo, Ferdinando Costanzo, Giorgio Polli, Sergio Colangeli
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:5696-5707
The design, realization, and tests of an S-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) single-chip front end (SCFE) is presented. The MMIC, realized on the 250-nm gate length GaN process available from the united monolit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::785a27bbea5e5b69a4c8be498c99d9c3
https://doi.org/10.1109/tmtt.2018.2861716
https://doi.org/10.1109/tmtt.2018.2861716
Autor:
M. Cirillo, Manuela Sotgia, Walter Ciccognani, Sergio Colangeli, Ernesto Limiti, Rocco Giofre, Ferdinando Costanzo
This paper presents the experimental results of a monolithic microwave integrated circuit (MMIC) high power amplifier (HPA) in Gallium Nitride (GaN) technology conceived for S- Band active electronically scanned array systems. The MMIC is based on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5915d882995dc4ed140c0ce23e46a93
http://hdl.handle.net/2108/209222
http://hdl.handle.net/2108/209222
Autor:
M. Vittori, Rocco Giofre, Walter Ciccognani, Ferdinando Costanzo, Manuela Sotgia, Giorgio Polli, M. Cirillo, Sergio Colangeli, Alessandro Salvucci, Ernesto Limiti
A Single-Chip Front-End design exploiting a 250-nm gate length GaN process provided by United Monolithic Semiconductor (UMS) is proposed in this contribution. The design procedure and preliminary measurement results are provided. In Rx mode, a noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eb6d0df7a5006d84ef52751f5d2dbbb1
http://hdl.handle.net/2108/212409
http://hdl.handle.net/2108/212409