Zobrazeno 1 - 10
of 279
pro vyhledávání: '"Manuel Quevedo"'
Autor:
Seungjin Nam, Sang Jun Kim, Kook Noh Yoon, Moon J. Kim, Manuel Quevedo-Lopez, Jun Yeon Hwang, Eun Soo Park, Hyunjoo Choi
Publikováno v:
Materials & Design, Vol 224, Iss , Pp 111391- (2022)
To develop alloys with high strength and reasonable ductility, CoCrFeNi-based metastable complex-concentrated alloys were designed using composition–property contour maps. The map was constructed by exploring the phase stability and mechanical beha
Externí odkaz:
https://doaj.org/article/48e0d5ad5c1b4f2986ac9b31fbf8c2ea
Autor:
Hadi Ebrahimi-Darkhaneh, Mahsa Shekarnoush, Josefina Arellano-Jimenez, Rodolfo Rodriguez, Luigi Colombo, Manuel Quevedo-Lopez, Sanjay K. Banerjee
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:24244-24259
Autor:
Nelly Escurra Quintana, Chap Kau Kwan Chung, Guillermo Manuel Quevedo Mongelos, Osmar Gabriel Garcete-Galeano, Ana Lucia Jara Valenzuela, Sady Belén Giménez
Publikováno v:
Revista Científica de la UCSA. 8:15-19
Autor:
A. Sanchez-Martinez, C E. Pérez-García, R. Ramírez Bon, Manuel Quevedo-Lopez, Jesus Avila-Avendano, D. E. Guzmán-Caballero, O. Ceballos-Sanchez
Publikováno v:
Ceramics International. 47:18898-18904
PbS thin films were deposited by the chemical bath deposition (CBD) technique at 43 °C on HfO2, SiO2, and Al2O3 dielectric films, which were previously deposited by atomic layer deposition (ALD) on silicon wafers. The effect of the dielectric surfac
Publikováno v:
IEEE Sensors Journal. 21:14807-14814
In recent years $\beta $ -Ga2O3 thin films and crystals have gained attention as excellent candidates for transparent and high-power applications due to its wide band gap (4.6 – 4.9 eV) and large breakdown field (~8 mV/cm). However, $\beta $ -Ga2O3
Autor:
Adelmo Ortiz-Conde, Carlos Avila-Avendano, M.I. Pintor-Monroy, J. A. Caraveo-Frescas, Manuel Quevedo-Lopez
Publikováno v:
IEEE Sensors Journal. 21:14815-14821
Large-area compatible, solar-blind deep-ultraviolet sensors based on active pixels are demonstrated with CMOS amplifiers based on poly-Si thin-film transistors and Ga2 O3 thin-film photoresistors. The active pixel configuration sensor enables approxi
Autor:
Carlos Avila-Avendano, M.I. Pintor-Monroy, Sheila E. Keating, Martin G. Reyes-Banda, Manuel Quevedo-Lopez, Marissa Higgins, Bayron L. Murillo, Vidushi Singh, Lidia El Bouanani
Publikováno v:
ACS Applied Materials & Interfaces. 13:28049-28056
Perovskite-based semiconductors, such as methylammonium and cesium lead halides (MPbX3: M = CH3NH3+ or Cs+; X = I-, Br-, or Cl-), have attracted immense attention for several applications, including radiation detection, due to their excellent electro
Material Properties Modulation in Inorganic Perovskite Films via Solution-Free Solid-State Reactions
Autor:
Leunam Fernandez-Izquierdo, Siddartha Srinivasan Nandagopala Krishnan, Xavier Mathew, Martin G. Reyes-Banda, J. A. Caraveo-Frescas, Manuel Quevedo-Lopez
Publikováno v:
ACS Applied Electronic Materials. 3:1468-1476
A simple solvent-free, versatile, and flexible route for material properties modulation in halide perovskite thin films has been developed using CsPbBr3 thin films. The method further enables compo...