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pro vyhledávání: '"Manuel Madlener"'
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 4, Pp 450-462 (2023)
Compared to state-of-the-art IGBTs, SiC power semiconductors allow to achieve ever higher system efficiencies and higher power densities in next-generation Variable Speed Drives (VSDs), thanks to their smaller relative chip size, ohmic on-state chara
Externí odkaz:
https://doaj.org/article/dc1b00c450bc4810a1c54c89efe5845c
