Multiscale Simulations for Defect-Controlled Processing of Group IV Materials

Autor: Gaetano Calogero, Ioannis Deretzis, Giuseppe Fisicaro, Manuel Kollmuß, Francesco La Via, Salvatore F. Lombardo, Michael Schöler, Peter J. Wellmann, Antonino La Magna

Publikováno v: Crystals, Vol 12, Iss 12, p 1701 (2022)

Multiscale approaches for the simulation of materials processing are becoming essential to the industrialization of future nanotechnologies, as they allow for a reduction in production costs and an enhancement of devices and applications. Their integ

Externí odkaz: https://doaj.org/article/fe6781160b474a6598370251a66ff35a

Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding

Autor: Manuel Kollmuss, Michael Schöler, Ruggero Anzalone, Marco Mauceri, Francesco La Via, Peter J. Wellmann

Publikováno v: Materials Science Forum. 1062:74-78

One setback that hinders the breakthrough of cubic silicon carbide is the lack of suitable seeding material for sublimation growth methods such as PVT. We present the growth of large area cubic silicon carbide material, up to a diameter of 100 mm, wi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7db37f82f0fe5bbd1394a7e453f9eb05
https://doi.org/10.4028/p-6ef373

Novel Photonic Applications of Silicon Carbide

Autor: Haiyan Ou, Xiaodong Shi, Yaoqin Lu, Manuel Kollmuss, Johannes Steiner, Vincent Tabouret, Mikael Syväjärvi, Peter Wellmann, Didier Chaussende

Publikováno v: Materials
Materials, 2023, 16 (3), pp.1014. ⟨10.3390/ma16031014⟩
Ou, H, Shi, X, Lu, Y, Kollmuss, M, Steiner, J, Tabouret, V, Syväjärvi, M, Wellmann, P & Chaussende, D 2023, ' Novel Photonic Applications of Silicon Carbide ', Materials, vol. 16, no. 3, 1014 . https://doi.org/10.3390/ma16031014

International audience; Silicon carbide (SiC) is emerging rapidly in novel photonic applications thanks to its unique photonic properties facilitated by the advances of nanotechnologies such as nanofabrication and nanofilm transfer. This review paper

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::84c564515678fa0d158b21e28b0e387f

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

Autor: Valdas Jokubavicius, Mikael Syväjärvi, Massimo Zimbone, Marco Mauceri, Rositsa Yakimova, Anna Marzegalli, Ioannis Deretzis, Leo Miglio, Giuseppe Fisicaro, Michael Schöler, Emilio Scalise, Manuel Kollmuss, Francesco La Via, Corrado Bongiorno, Ruggero Anzalone, Antonino La Magna, Peter J. Wellmann, Danilo Crippa, Filippo Giannazzo, Andrey Sarikov, Cristiano Calabretta, Viviana Scuderi, Marcin Zielinski, Philipp Schuh

Publikováno v: Materials, Vol 14, Iss 5348, p 5348 (2021)
Materials

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e2539de12916dd4de1f3366636f4cfd
https://www.mdpi.com/1996-1944/14/18/5348