Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Manuel A. Quevedo Lopez"'
Autor:
Zhiyang Qin, Jesus Alfonso Caraveo-Frescas, Leunam Fernandez-Izquierdo, M. Josefina Arellano-Jimenez, Francisco S. Aguirre-Tostado, Martin Gregorio Reyes-Banda, Manuel A. Quevedo-Lopez
Publikováno v:
ACS Omega, Vol 9, Iss 24, Pp 26683-26691 (2024)
Externí odkaz:
https://doaj.org/article/0e472bfb2ebd402386637ea4174e2787
Autor:
Carlos. A. Hernandez-Gutierrez, Carlos Avila-Avendano, Horacio. I. Solis-Cisneros, Jorge Conde, Perla. Y. Sevilla-Camacho, Manuel A. Quevedo-Lopez
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1310-1315
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ca0c63ee2e11d781aedeea4168ba3ac
https://doi.org/10.1109/tns.2022.3171695
https://doi.org/10.1109/tns.2022.3171695
Autor:
Lidia El Bouanani, Rodolfo A. Rodriguez-Davila, Zeshaan Shamsi, Martin Gregorio Reyes-Banda, Manuel A. Quevedo-Lopez
Publikováno v:
ACS applied materialsinterfaces. 14(25)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4f7b28fa95834d6ca9b4d989e118132
https://pubmed.ncbi.nlm.nih.gov/35700351
https://pubmed.ncbi.nlm.nih.gov/35700351
Autor:
Jesus A. Caraveo‐Frescas, Martin G. Reyes‐Banda, Leunam Fernandez‐Izquierdo, Manuel A. Quevedo‐Lopez
Publikováno v:
Advanced Materials Technologies. 7:2100956
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6778533727c5175fffbc7963612d7a8f
https://doi.org/10.1002/admt.202100956
https://doi.org/10.1002/admt.202100956
Autor:
Maria Isabel, Pintor-Monroy, Bayron L, Murillo-Borjas, Massimo, Catalano, Manuel A, Quevedo-Lopez
Publikováno v:
ACS applied materialsinterfaces. 11(30)
The oxygen partial pressure during NiO deposition in reactive sputtering of a Ni target is used to control its carrier type and concentration, obtaining both n- and p-type films. Carrier concentration can be controlled, ranging from 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::b009dff03c5a4e3b577a796a7622b9d5
https://pubmed.ncbi.nlm.nih.gov/31283171
https://pubmed.ncbi.nlm.nih.gov/31283171
Autor:
Maria Isabel, Pintor-Monroy, Diego, Barrera, Bayron L, Murillo-Borjas, Francisco Javier, Ochoa-Estrella, Julia W P, Hsu, Manuel A, Quevedo-Lopez
Publikováno v:
ACS applied materialsinterfaces. 10(44)
One of the major limitations of oxide semiconductors technology is the lack of proper p-type materials to enable devices such as pn junctions, light-emitting diodes, and photodetectors. This limitation has resulted in an increased research focus on t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::51a2dd83b1ca314c699aac5e35f50577
https://pubmed.ncbi.nlm.nih.gov/30360100
https://pubmed.ncbi.nlm.nih.gov/30360100
Autor:
Claudia A. Rodríguez González, Edna V. Escobar Zapata, Manuel A. Quevedo Lopez, Perla E. García-Casillas, Javier Servando Castro Carmona, Carlos Alberto Martinez Perez
Publikováno v:
Journal of Alloys and Compounds. 536:S441-S444
Cancer treatment is a big challenge in medicine where chemotherapies and radiotherapies are aggressive and poorly effective having side effects as delirium, fatigue, insomnia, nausea and vomiting which are common problems for cancer patients. For thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2c0ad57aaee16b6971036360a63d066
https://doi.org/10.1016/j.jallcom.2011.12.150
https://doi.org/10.1016/j.jallcom.2011.12.150
Autor:
Ramish Esterlich, Joan1 (AUTHOR), Affannoukoue, Kevin1 (AUTHOR), Kaupmees, Reelika2 (AUTHOR), Miakota, Denys1 (AUTHOR), Engberg, Sara1 (AUTHOR), Grossberg-Kuusk, Maarja2 (AUTHOR), Schou, Jørgen1 (AUTHOR), Canulescu, Stela1 (AUTHOR) stec@fotonik.dtu.dk
Publikováno v:
Applied Physics A: Materials Science & Processing. Jan2023, Vol. 129 Issue 1, p1-8. 8p. 1 Black and White Photograph, 1 Diagram, 1 Chart, 4 Graphs.
Publikováno v:
2D Materials; Jan2019, Vol. 6 Issue 1, p1-1, 1p
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2023, Vol. 41 Issue 4, p1-9, 9p