Zobrazeno 1 - 10
of 417
pro vyhledávání: '"Mantl, P."'
Autor:
Robert Stefan, Gerd Mantl, Claudia Höfner, Julia Stammer, Markus Hochgerner, Kathrin Petersdorfer
Publikováno v:
Frontiers in Psychology, Vol 12 (2021)
Aims: Research conducted prior to the onset of the COVID-19 pandemic indicates that remote psychotherapy is as effective as in-person treatment. At that time, it usually was the therapist’s individual choice to work remotely, whereas the pandemic p
Externí odkaz:
https://doaj.org/article/b2b2be97738149d383d00523e7e5b544
Autor:
Stefan Glass, Kimihiko Kato, Lidia Kibkalo, Jean-Michel Hartmann, Shinichi Takagi, Dan Buca, Siegfried Mantl, Zhao Qing-Tai
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1070-1076 (2018)
In this combined experiment and simulation study we investigate a SiGe/Si based gate-normal tunneling field-effect transistor (TFET) with a pillar shaped contact to the tunneling junction which brings forth two significant advantages. The first, is i
Externí odkaz:
https://doaj.org/article/2c5f77c12f4d49d5b34ec919b5b1506d
Autor:
G. V. Luong, S. Strangio, A. T. Tiedemann, P. Bernardy, S. Trellenkamp, P. Palestri, S. Mantl, Q. T. Zhao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1033-1040 (2018)
A half SRAM cell with strained Si nanowire complementary tunnel-FETs (TFETs) was fabricated and characterized to explore the feasibility and functionality of 6T-SRAM based on TFETs. Outward-faced n-TFETs are used as access-transistors. Static measure
Externí odkaz:
https://doaj.org/article/a625054c5f9e4591b41c64cc378915ee
Autor:
Wolfgang A. Vitale, Emanuele A. Casu, Arnab Biswas, Teodor Rosca, Cem Alper, Anna Krammer, Gia V. Luong, Qing-T. Zhao, Siegfried Mantl, Andreas Schüler, A. M. Ionescu
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-10 (2017)
Abstract Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature.
Externí odkaz:
https://doaj.org/article/73ca29e6befb407bb05995e0d2252883
Autor:
Nils von den Driesch, Daniela Stange, Denis Rainko, Ivan Povstugar, Peter Zaumseil, Giovanni Capellini, Thomas Schröder, Thibaud Denneulin, Zoran Ikonic, Jean‐Michel Hartmann, Hans Sigg, Siegfried Mantl, Detlev Grützmacher, Dan Buca
Publikováno v:
Advanced Science, Vol 5, Iss 6, Pp n/a-n/a (2018)
Abstract Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with in
Externí odkaz:
https://doaj.org/article/0b278e7135ce4ea0ab9cac76a5fbab40
Autor:
Sebastiano Strangio, Pierpaolo Palestri, DAVID Esseni, Luca Selmi, Felice Crupi, Simon Richter, Qing-Tai Zhao, Siegfried Mantl
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 223-232 (2015)
We use mixed device-circuit simulations to predict the performance of 6T static RAM (SRAM) cells implemented with tunnel-FETs (TFETs). Idealized template devices are used to assess the impact of device unidirectionality, which is inherent to TFETs an
Externí odkaz:
https://doaj.org/article/cfb1c397777144b4a0de5731e025fe2d
Autor:
Qing-Tai Zhao, Simon Richter, Christian Schulte-Braucks, Lars Knoll, Sebastian Blaeser, Gia Vinh Luong, Stefan Trellenkamp, Anna Schafer, Andreas Tiedemann, Jean-Michel Hartmann, Konstantin Bourdelle, Siegfried Mantl
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 3, Pp 103-114 (2015)
Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified. Along this line, improvements achieved by the implementation of uniaxial str
Externí odkaz:
https://doaj.org/article/ce50efb927fd4f579106abc420c524cf
Akademický článek
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Publikováno v:
Applied Sciences, Vol 8, Iss 5, p 670 (2018)
In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET) with gate-all-around (GAA) structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The
Externí odkaz:
https://doaj.org/article/f61069d4295549c09c30f8e82b61ad39
Akademický článek
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