Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Mantavya Sinha"'
Publikováno v:
IEEE Transactions on Electron Devices. 57:1279-1286
We have demonstrated the introduction of an additional aluminum (Al) implant step in the fabrication of strained p-FinFETs with silicon-germanium (SiGe) source/drain (S/D). Al is implanted. into the p+-SiGe S/D region at energy of 10 keV and a dose o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05e5c5c0d302f228dddd78c57976ad68
https://doi.org/10.1109/ted.2010.2045682
https://doi.org/10.1109/ted.2010.2045682
Autor:
Yee-Chia Yeo, Eng Fong Chor, Guo-Qiang Lo, Sivasubramaniam Nandini Devi, Mantavya Sinha, Rinus T. P. Lee
Publikováno v:
ECS Transactions. 19:323-330
This paper demonstrates the integration of a novel aluminum (Al) segregated NiSiGe/p+-SiGe S/D contact junction in strained tri-gate p-FinFETs for drive current enhancement. Al is introduced by ion implant into p+-SiGe S/D region followed by nickel d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30dcf266716cbef96bcd1494b522ae0f
https://doi.org/10.1149/1.3118959
https://doi.org/10.1149/1.3118959
Publikováno v:
IEEE Electron Device Letters. 31:918-920
This letter reports the demonstration of a nickel-silicide contact technology that achieves dual near-band-edge barrier heights (i.e., a low electron barrier height ΦBn for n-FETs and a low hole barrier height ΦBp for p-FETs) using just one additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da65efd10755c80e1ef9f4c56ccdb4c2
https://doi.org/10.1109/led.2010.2052586
https://doi.org/10.1109/led.2010.2052586
Publikováno v:
IEEE Electron Device Letters. 30:1278-1280
This letter reports on the fabrication and hole Schottky barrier (PhiB P) modulation of a novel nickel (Ni)dysprosium (Dy)-alloy germanosilicide (NiDySiGe) on silicon-germanium (SiGe). Aluminum (Al) implant is utilized to lower the PhiB P of NiDySiGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95c8ccedcc8a7df0f170bd5358c941c9
https://doi.org/10.1109/led.2009.2034111
https://doi.org/10.1109/led.2009.2034111
Autor:
Wei-Wei Fang, Chee-Mang Ng, Hock-Chun Chin, Yi Tong, Ganesh S. Samudra, Mantavya Sinha, Shao-Ming Koh, Yee-Chia Yeo, Xingui Zhang
Publikováno v:
2009 International Semiconductor Device Research Symposium.
Embedded Silicon-Carbon (e-Si:C) source/drain (S/D) stressor enhances n-FET drive current I on , and is a much-needed strain engineering option for future logic technologies. However, carbon in Si reduces dopant activation and increases the external
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a93d89da8fab40405c81b6b47874440e
https://doi.org/10.1109/isdrs.2009.5378216
https://doi.org/10.1109/isdrs.2009.5378216
Autor:
Mantavya Sinha, Yee-Chia Yeo, Eng Fong Chor, Rinus T. P. Lee, Sivasubramaniam Nandini Devi, Guo-Qiang Lo
Publikováno v:
2009 International Symposium on VLSI Technology, Systems, and Applications.
This paper demonstrates the integration of Al segregated NiSi/p+-Si S/D contact junction in p-FinFETs for parasitic series resistance reduction. Al is introduced by ion implant into p+ S/D region followed by nickel deposition and silicidation. Drive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24317ded69407c389ebcf7b95f02c15a
https://doi.org/10.1109/vtsa.2009.5159297
https://doi.org/10.1109/vtsa.2009.5159297
Publikováno v:
Extended Abstracts of the 2008 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21000080937010d11b3bf4359bfae716
https://doi.org/10.7567/ssdm.2008.a-6-4
https://doi.org/10.7567/ssdm.2008.a-6-4
Publikováno v:
2005 IEEE Conference on Electron Devices and Solid-State Circuits.
We propose use of heterostructures in PIN rectifiler diodes for obtaining faster switching speed. It is shown that by employing a small bandgap material in the heavily doped P layer and a wide bandgap material in the intrinsic region, reverse recover
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::325d50e07851c55125127187b03d3abc
https://doi.org/10.1109/edssc.2005.1635400
https://doi.org/10.1109/edssc.2005.1635400
Publikováno v:
Journal of Applied Physics. 106:043703
The effective electron Schottky barrier height (ΦBN) of nickel silicide (NiSi:C) formed on silicon-carbon (Si1−yCy or Si:C) films with different substitutional carbon concentrations Csub was investigated. ΦBN was observed to decrease substantiall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf9df42f612ac7d9ab9fe1773ef79791
https://doi.org/10.1063/1.3197144
https://doi.org/10.1063/1.3197144
Autor:
Shao Ming Koh, Wei-Jing Zhou, Rinus T. P. Lee, Mantavya Sinha, Chee-Mang Ng, Zhiyong Zhao, Helen Maynard, Naushad Variam, Yuri Erokhin, Ganesh Samudra, Yee-Chia Yeo
Publikováno v:
ECS Meeting Abstracts. :2365-2365
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c72f83a2c0245ec568aabc98c953409a
https://doi.org/10.1149/ma2009-02/31/2365
https://doi.org/10.1149/ma2009-02/31/2365