Comparison of optical, electrical, and surface characteristics of InGaN thin films at non-flow and small nitrogen flow cases.

Autor: Mantarcı, Asim¹ (AUTHOR) a.mantarci@alparslan.edu.tr

Publikováno v: Optical & Quantum Electronics. Sep2021, Vol. 53 Issue 9, p1-11. 11p.

Changes in optical and sensing properties of 26DCzPPy WOLED material for different molarities.

Autor: Mantarcı, Asim¹ (AUTHOR) a.mantarci@alparslan.edu.tr

Publikováno v: Optical & Quantum Electronics. Jan2021, Vol. 53 Issue 1, p1-15. 15p.

Some metal chelates with Schiff base ligand: synthesis, structure elucidation, thermal behavior, XRD evaluation, antioxidant activity, enzyme inhibition, and molecular docking studies.

Autor: Turan N; Department of Chemistry, Faculty of Arts and Sciences, Muş Alparslan University, 49250, Muş, Turkey. nevintrn@hotmail.com., Buldurun K; Department of Food Processing, Technical Science Vocational School, Muş Alparslan University, 49250, Muş, Turkey., Türkan F; Health Services Vocational School, Igdır University, 76000, Igdır, Turkey., Aras A; Department of Biochemistry, Faculty of Arts and Sciences, Igdır University, 76100, Igdır, Turkey., Çolak N; Department of Chemistry, Faculty of Arts and Sciences, Hitit University, 19100, Çorum, Turkey., Murahari M; Department of Pharmaceutical Chemistry, Faculty of Pharmacy, M.S. Ramaiah University of Applied Sciences, Bangalore, India., Bursal E; Department of Nursing, Faculty of Health, Muş Alparslan University, 49250, Muş, Turkey., Mantarcı A; Department of Physics, Faculty of Arts and Sciences, Muş Alparslan University, 49250, Muş, Turkey.

Publikováno v: Molecular diversity [Mol Divers] 2022 Oct; Vol. 26 (5), pp. 2459-2472. Date of Electronic Publication: 2021 Nov 07.

Electrical and optical conductance behavior of InGaN thin films for various physical models towards optoelectronic applications

Autor: Asim Mantarcı

Publikováno v: Asim Mantarcı

The optical and electrical conductivity behavior of materials produced at various pressures was investigated using many physical models. The highest electrical conductivity value of the film was obtained at 799 E(-6) kPa pressure, while the lowest el

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1aa584a05d8769b597e955d2cfbafcaf
https://doi.org/10.1007/s42247-021-00242-1

Structural, Morphological, and Optical Characterization of GaN/p-Si Thin Films for Various Argon Flow Rates

Autor: Asim Mantarcı

Publikováno v: JOM. 72:552-560

2-s2.0-85074731825 A thin film of gallium nitride (GaN) was successfully grown onto p-Si by a radio-frequency (RF) magnetron sputter for different argon flows. X-ray diffraction (XRD) results proved that GaN thin film had a polycrystalline structure

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::204da6d13e560597774e935c130eb536
https://doi.org/10.1007/s11837-019-03878-x