Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Mansug Kang"'
Autor:
Yong-Han Roh, Seung-Heon Lee, Kyungseok Oh, Jung-Chan Lee, Jun-Hee Lee, Mun-jun Kim, Seok-Woo Nam, Seung-jae Lee, Mansug Kang
Publikováno v:
ECS Transactions. 33:53-58
We studied the misalignment between active and gate layer in terms of silicon dislocation caused by high temperature anneal process in SOG based STI gap-fill process. The SOG process is one of good candidates to overcome gap-fill limitation due to it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e09496e4e4e7ec2d55702a7ecf72e433
https://doi.org/10.1149/1.3567403
https://doi.org/10.1149/1.3567403
Publikováno v:
IEEE Electron Device Letters. 32:1113-1115
We first present chemical-vapor-deposited GeBiTe (CVD GBT) in a confined cell for high-performance phase-change random access memory (PRAM). Due to the fast crystallization of GBT, we were able to reduce the speed to less than 26 ns while maintaining
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50e79fb956cf605fd8a05149448af713
https://doi.org/10.1109/led.2011.2157075
https://doi.org/10.1109/led.2011.2157075
Autor:
Ho-Kyu Kang, Hayoung Yi, Hong-Gun Kim, Yong-Soon Choi, Seok-Woo Nam, Young-Ho Koh, Mansug Kang, ByeongJu Bae, Namjin Cho, Seung-Heon Lee, Jinhyung Park, Chilhee Chung, Jun-Won Lee, Eunkee Hong, Seungmoo Lee
Publikováno v:
2012 IEEE International Interconnect Technology Conference.
Flowable CVD (Chemical Vapor Deposition) process having merits in terms of both superior gap-fill performance of SOD (Spin-on Dielectric) and process stability of CVD was introduced for the interlayer dielectric (ILD) in sub-20nm devices based on new
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21e1490a594a3b398e8fd3f13e01c293
https://doi.org/10.1109/iitc.2012.6251590
https://doi.org/10.1109/iitc.2012.6251590
Autor:
Jeong-Woo Lee, Jeong-Lim Nam, Kyung-Joong Joo, Mansug Kang, Sung-Hoi Hur, Kyu-Charn Park, Moonyong Lee, Kang-ill Seo, Jung-Dal Choi, Yong-Sik Yim, Jae-Duk Lee, Joon Chul Kim, Seong-Soon Cho, Hong-Soo Kim, Kyung-hyun Kim, Heung-Soo Im
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
An 1 Gb NAND flash memory has been successfully developed by integrating new technologies, inverse narrow-width effect (INWE) suppression scheme, 32-cell NAND flash combined with the scaling-down of tunnel oxide, inter-poly ONO, and gate poly re-oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4de1f2d5fc72d56c1a290164ec4a667a
https://doi.org/10.1109/iedm.2001.979394
https://doi.org/10.1109/iedm.2001.979394