Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Manoj Vellaikal"'
Autor:
Manish Hemkar, Errol Sanchez, Tushar Mandrekar, Mohammad Chowdhury, Zuoming Zhu, Chris Olsen, Manoj Vellaikal, Schubert Chu
Publikováno v:
ECS Meeting Abstracts. :1053-1053
Device scaling and new applications in nanoelectronics present increasing challenges to epitaxy. Reducing thermal budgets, compatibility with novel materials, increasing topology and higher device density require new strategies for both the epitaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19bd8a6384318723be3d71f457bf749a
https://doi.org/10.1149/ma2018-02/31/1053
https://doi.org/10.1149/ma2018-02/31/1053
Autor:
K. Rapolu, Kapila Wijekoon, Michael P. Stewart, David Tanner, F. Yan, Jeff Franklin, Xuesong Lu, Andie Chan, Hemant P. Mungekar, Hari Ponnekanti, Yi Zheng, Prabhat Kumar, V. Dabeer, Lin Zhang, Mukul Agrawal, Manoj Vellaikal, Damanjot Kaur Kochhar
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
An integration process was developed for the fabrication of rear passivated point contact solar cells achieving 19.36% conversion efficiency by using 156×156mm, pseudo square, p-type single crystalline silicon wafers. This is a significant improveme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018a630600b7d9a458c5350d2aba1c22
https://doi.org/10.1109/pvsc.2012.6317807
https://doi.org/10.1109/pvsc.2012.6317807
Autor:
Kapila Wijekoon, Manoj Vellaikal, Damanjot Kaur Kochhar, Lin Zhang, F. Yan, Xuesong Lu, Mukul Agrawal, Yi Zheng, Hari Ponnekanti, David Tanner, V. Dabeer, Prabhat Kumar, K. Rapolu, A. Chan, Hemant P. Mungekar, Michael P. Stewart, Jeff Franklin
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
This work reports on the integration process of rear point contact solar cells with reduced recombination and better light trapping than the conventional cells. Al 2 O 3 /SiN x passivation stacks were used to ensure the backside passivation and the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2910601b05d8c26e76de5267a7c4b0b5
https://doi.org/10.1109/pvsc.2012.6318030
https://doi.org/10.1109/pvsc.2012.6318030
Autor:
Linlin Wang, Anchuan Wang, Jin Ho Jeon, Y.S. Lee, H.S. Whitesell, J. Bloking, Manoj Vellaikal
Publikováno v:
2007 International Symposium on Semiconductor Manufacturing.
A novel gap fill approach, Integrated Profile Modulation (IPM), with repeating deposition and etch cycles is developed to extend HDP for complete gap fill to 45 nm node and beyond, with established HDP CVD film properties and integration. In this pap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c4c20e357d0ff7f316ba53f9088fc29
https://doi.org/10.1109/issm.2007.4446868
https://doi.org/10.1109/issm.2007.4446868
Publikováno v:
MRS Proceedings. 612
A low κ dielectric barrier/etch stop has been developed for use in copper damascene application. The film is deposited using methane, silane and argon as precursors in a HDP-CVD reactor. The film has a dielectric constant of 4.2 which is lower than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e452101d138347f7a9d44f66f9c85e9
https://doi.org/10.1557/proc-612-d9.14.1
https://doi.org/10.1557/proc-612-d9.14.1
Publikováno v:
MRS Proceedings. 564
HDP-FSG has been integrated as an inter-metal dielectric in a multilevel interconnect scheme. Process regimes for obtaining stable HDP-FSG films were identified. Gap-fill of high aspect ratio structures was achieved for 0.18µm technology node. HDP-F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381150ef280c9799503e8937d9ccf0d8
https://doi.org/10.1557/proc-564-443
https://doi.org/10.1557/proc-564-443
Publikováno v:
Journal of The Electrochemical Society. 151:G839
Chemical mechanical polishing (CMP) has been used for a long time in the manufacturing of prime silicon wafers for the IC industry. Lately, other substrates, such as silicon-on-insulator has become in use which requires a greater control of the silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0f80e70404005d965a131ed57337846
https://doi.org/10.1149/1.1811596
https://doi.org/10.1149/1.1811596