Zobrazeno 1 - 10
of 3 292
pro vyhledávání: '"Mano, T."'
Research focused on heat transport in the quantum Hall (QH) edge channel has successfully addressed fundamental theoretical questions surrounding the QH physics. However, the picture of the edge channel is complicated by the phenomenon of energy diss
Externí odkaz:
http://arxiv.org/abs/2212.12628
Spin helices in GaAs quantum wells: Interplay of electron density, spin diffusion, and spin lifetime
To establish a correlation between the spin diffusion, the spin lifetime, and the electron density, we study, employing time-resolved magneto-optical Kerr effect microscopy, the spin polarization evolution in low-dimensional GaAs semiconductors hosti
Externí odkaz:
http://arxiv.org/abs/2206.03920
Publikováno v:
Appl. Phys. Express 13, 025002 (2020); open access
We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band. The luminescence
Externí odkaz:
http://arxiv.org/abs/2001.07329
Autor:
Manca, M., Wang, G., Kuroda, T., Shree, S., Balocchi, A., Renucci, P., Marie, X., Durnev, M. V., Glazov, M. M., Sakoda, K., Mano, T., Amand, T., Urbaszek, B.
Publikováno v:
Appl. Phys. Lett. 112, 142103 (2018)
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. H
Externí odkaz:
http://arxiv.org/abs/1802.00629
Autor:
Anghel, S., Passmann, F., Singh, A., Ruppert, C., Poshakinskiy, A. V., Tarasenko, S. A., Moore, J. N., Yusa, G., Mano, T., Noda, T., Li, X., Bristow, A. D., Betz, M.
Publikováno v:
Phys. Rev. B 97, 125410 (2018)
Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation micro-spectroscopy, supported by qualitative kinetic theory simulations of spin diffusion an
Externí odkaz:
http://arxiv.org/abs/1708.09150
Publikováno v:
Appl. Phys. Express 9, 101201 (2016)
By using a C3v symmetric (111) surface as a growth substrate, we are able to achieve high structural symmetry in self-assembled quantum dots, which are suitable for use as quantum-entangled photon emitters. Here we report on the wavelength controllab
Externí odkaz:
http://arxiv.org/abs/1607.06859
Autor:
Vidal, M., Durnev, M. V., Bouet, L., Amand, T., Glazov, M. M., Ivchenko, E. L., Zhou, P., Wang, G., Mano, T., Kuroda, T., Marie, X., Sakoda, K., Urbaszek, B.
Publikováno v:
Phys. Rev. B 94, 121302 (2016)
In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better unders
Externí odkaz:
http://arxiv.org/abs/1603.02909
Autor:
Durnev, M. V., Vidal, M., Bouet, L., Amand, T., Glazov, M. M., Ivchenko, E. L., Zhou, P., Wang, G., Mano, T., Ha, N., Kuroda, T., Marie, X., Sakoda, K., Urbaszek, B.
Publikováno v:
Phys. Rev. B 93, 245412 (2016)
We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing i
Externí odkaz:
http://arxiv.org/abs/1511.08196
Autor:
Ha, N., Mano, T., Chou, Y. L., Wu, Y. N., Cheng, S. J., Bocquel, J., Koenraad, P. M., Ohtake, A., Sakuma, Y., Sakoda, K., Kuroda, T.
Publikováno v:
Phys. Rev. B 92, 075306 (2015)
Making use of droplet epitaxy, we systematically controlled the height of self-assembled GaAs quantum dots by more than one order of magnitude. The photoluminescence spectra of single quantum dots revealed the strong dependence of the spectral linewi
Externí odkaz:
http://arxiv.org/abs/1504.02239
Autor:
Bouet, L., Vidal, M., Mano, T., Ha, N., Kuroda, T., Durnev, M. V., Glazov, M. M., Ivchenko, E. L., Marie, X., Amand, T., Sakoda, K., Wang, G., Urbaszek, B.
Publikováno v:
Applied Physics Letters 105, 082111 (2014)
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in Q
Externí odkaz:
http://arxiv.org/abs/1407.6585