Advances in high κ gate dielectrics for Si and III–V semiconductors

Autor: Kwo, J. ^*, Hong, M., Busch, B., Muller, D.A., Chabal, Y.J., Kortan, A.R., Mannaerts, J.P., Yang, B., Ye, P., Gossmann, H., Sergent, A.M., Ng, K.K., Bude, J., Schulte, W.H., Garfunkel, E., Gustafsson, T.

Publikováno v: In Journal of Crystal Growth 2003 251(1):645-650

Probing the microscopic compositions at Ga 2O 3(Gd 2O 3)/GaAs interface by core level photoelectron spectroscopy

Autor: Lay, T.S. ^*, Huang, K.H., Hung, W.H., Hong, M., Kwo, J., Mannaerts, J.P.

Publikováno v: In Solid State Electronics 2001 45(3):423-426

Structure of Sc2O3 Films Epitaxially Grown on α-Al2O3 (111).

Autor: Kortan, A.R., Hong, M., Kwo, J., Chang, P., Chen, C.P., Mannaerts, J.P., Liou, S.H.

Publikováno v: MRS Online Proceedings Library; 2004, Vol. 811 Issue 1, p49-54, 6p

DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga2O3(Gd2O3) gate dielectric layer.

Autor: Yang, B., Ye, P.D., Kwo, J., Frei, M.R., Gossmann, H.-J.L., Mannaerts, J.P., Sergent, M., Hong, M., Ng, K.K., Bude, J.

Publikováno v: 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposium; 2002, p139-142, 4p

Single crystal rare earth oxides epitaxially grown on GaN.

Autor: Hong, M., Kortan, A.R., Kwo, J., Mannaerts, J.P., Lee, C.M., Chyi, J.I.

Publikováno v: 2000 IEEE International Symposium on Compound Semiconductors. Proceedings of the IEEE Twenty-Seventh International Symposium on Compound Semiconductors (Cat. No.00TH8498); 2000, p495-500, 6p