Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Manjula Siriwardhana"'
Autor:
Fiacre E. Rougieux, Wolfram Kwapil, Friedemann Heinz, Manjula Siriwardhana, Martin C. Schubert
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-5 (2019)
Abstract In this paper we present a contactless transient carrier spectroscopy and imaging technique for traps in silicon. At each pixel, we fit the transient decay of the trap emission which allows us to obtain both the trap time constant and trap c
Externí odkaz:
https://doaj.org/article/da8da0e4beba4c2f8c60be0c9cf2a67b
Publikováno v:
IEEE Journal of Photovoltaics. 12:222-229
Photoluminescence spectra have been measured at 80 K in Czochralski-grown silicon wafers annealed at 450 °C, causing thermal donor and oxygen-precipitate generation. Six subbandgap luminescence peaks were identified after the annealing. One peak, ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01997a9eeae92cce0505cc2ea55f1a3a
https://doi.org/10.1109/jphotov.2021.3126120
https://doi.org/10.1109/jphotov.2021.3126120
Publikováno v:
ACS Applied Energy Materials. 4:11258-11267
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192916deae9577b9ac8e838adf864338
https://doi.org/10.1021/acsaem.1c02100
https://doi.org/10.1021/acsaem.1c02100
Publikováno v:
IEEE Journal of Photovoltaics. 11:273-281
The capture cross sections are a key metric to characterize carrier traps in semiconductors. In this article, photoconductance measurements are used to estimate the capture cross sections of traps that are induced by thermal donors in Czochralski-gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3b37d0a73ff8a96d8ecd787a77de947
https://doi.org/10.1109/jphotov.2020.3043835
https://doi.org/10.1109/jphotov.2020.3043835
Autor:
Manjula Siriwardhana
Publikováno v:
Renewable Energy. 152:1121-1128
Bio-oil has several undesired fuel properties such as high viscosity, high acidity, high molecular weight, instability, and phase separation upon aging. Further, the high oxygen content (typically 45–50 wt%) and the water content (typically 15–30
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de64cab4aed3c178c2f31ed50b6b8364
https://doi.org/10.1016/j.renene.2020.01.095
https://doi.org/10.1016/j.renene.2020.01.095
Publikováno v:
Solar Energy Materials and Solar Cells. 248:111965
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80e869e3322cbf4557b9f7f570a1571c
https://doi.org/10.1016/j.solmat.2022.111965
https://doi.org/10.1016/j.solmat.2022.111965
Publikováno v:
2020 47th IEEE Photovoltaic Specialists Conference (PVSC).
Low-temperature photoluminescence spectroscopy is applied to investigate the difference in luminescence spectra in phosphorous doped and boron doped Cz-Si wafers with different concentrations of thermal double donors. The thermal donors were created
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e1c974df3cc60eb9e7827f9a98a2923
https://doi.org/10.1109/pvsc45281.2020.9300685
https://doi.org/10.1109/pvsc45281.2020.9300685
Autor:
Wolfram Kwapil, Martin C. Schubert, Fiacre Rougieux, Manjula Siriwardhana, Friedemann D. Heinz
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-5 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-5 (2019)
In this paper we present a contactless transient carrier spectroscopy and imaging technique for traps in silicon. At each pixel, we fit the transient decay of the trap emission which allows us to obtain both the trap time constant and trap concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52911119c898eacb1fdfdddf805b61b6
http://europepmc.org/articles/PMC6776499
http://europepmc.org/articles/PMC6776499
Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation
Publikováno v:
physica status solidi (a). 218:2000587
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84eea1c9ba755a0880de7451d706e230
https://doi.org/10.1002/pssa.202000587
https://doi.org/10.1002/pssa.202000587
Publikováno v:
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC).
The trapping characteristics of defects related to thermal donors have been studied with transient photoconductance measurements in Cz monocrystalline silicon wafers. The samples were annealed for various lengths of time to create a range of thermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a80edee4bed7584b4504b6d8128613c
https://doi.org/10.1109/pvsc.2018.8547946
https://doi.org/10.1109/pvsc.2018.8547946