Zobrazeno 1 - 10
of 47
pro vyhledávání: '"Manjul Bhushan"'
Publikováno v:
IEEE Transactions on Applied Superconductivity. 29:1-11
Energy-efficient rapid single flux quantum circuits having zero static power dissipation require a feeding Josephson junction transmission line (FJTL) to stabilize the power bus voltage. It is shown how a FJTL can be configured to obtain a desired cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d7b3fc0d52fd347e114e4ec9977d083
https://doi.org/10.1109/tasc.2019.2907690
https://doi.org/10.1109/tasc.2019.2907690
Publikováno v:
IEEE Transactions on Applied Superconductivity. 29:1-7
A test structure suite to measure circuit delays, power, and operating margins of single flux quantum (SFQ) circuits and to derive key parameters directly from dc testable high-speed circuits is described. This suite comprises a set of ring oscillato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a3a5906b335286b3bfd6b265968bb28
https://doi.org/10.1109/tasc.2019.2898410
https://doi.org/10.1109/tasc.2019.2898410
Autor:
Manjul Bhushan, Mark B. Ketchen
CMOS Test and Evaluation: A Physical Perspective is a single source for an integrated view of test and data analysis methodology for CMOS products, covering circuit sensitivities to MOSFET characteristics, impact of silicon technology process variabi
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:180-185
A technique for extracting small signal MOSFET gate capacitance as a function of bias voltage from measurements of circuit delay and power is described. This approach makes use of a ring oscillator with stages in which an independent bias voltage is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c663670aa439d7236110ae36059a78
https://doi.org/10.1109/tsm.2008.2000286
https://doi.org/10.1109/tsm.2008.2000286
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 19:10-18
Test structures utilizing ring oscillators to monitor MOSFET ac characteristics for digital CMOS circuit applications are described. The measurements provide information on the average behavior of sets of a few hundred MOSFETs under high speed switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a6eae904975f584c05e72b32caf62e6
https://doi.org/10.1109/tsm.2005.863244
https://doi.org/10.1109/tsm.2005.863244
Publikováno v:
Microelectronics Reliability. 45:1471-1475
We propose a simple, noninvasive, optical technique to measure intra-wafer and intra-chip MOSFET performance variations. Technique utilizes correlation between device performance and weak near-infrared emission from its off-state current. It maps per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fafadcdef92907bafff3fdba6c6792f
https://doi.org/10.1016/j.microrel.2005.07.031
https://doi.org/10.1016/j.microrel.2005.07.031
Publikováno v:
Review of Scientific Instruments. 75:768-771
The delay of a partially depleted silicon-on-insulator complementary metal oxide semiconductor (MOS) logic gate can vary by 10% or more due to history effects. We describe and demonstrate a circuit and measurement technique with which one can measure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c3a83a543afc06b897ca068792ffa93
https://doi.org/10.1063/1.1647697
https://doi.org/10.1063/1.1647697
Autor:
Mark B. Ketchen, Manjul Bhushan
Publikováno v:
CMOS Test and Evaluation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8416c88268f8dfa51b7875a0972e122
https://doi.org/10.1007/978-1-4939-1349-7
https://doi.org/10.1007/978-1-4939-1349-7
Autor:
Manjul Bhushan, Mark B. Ketchen
Publikováno v:
CMOS Test and Evaluation ISBN: 9781493913480
Relational databases to store design and electrical test data coupled with software tools for statistical analysis and graphics have provided a high degree of automation to post-processing of data for rapid feedback and debug. However, domain experti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be22e3aaa9d9e2e9d4431684d63df51b
https://doi.org/10.1007/978-1-4939-1349-7_9
https://doi.org/10.1007/978-1-4939-1349-7_9
Autor:
Manjul Bhushan, Mark B. Ketchen
Publikováno v:
CMOS Test and Evaluation ISBN: 9781493913480
It is often necessary to make a direct comparison among CMOS technologies offered by different foundries at a particular technology node, among different technology nodes, or between similar technologies on different substrates, such as bulk silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72d2dc565daf7e7e80e8904df27cf858
https://doi.org/10.1007/978-1-4939-1349-7_10
https://doi.org/10.1007/978-1-4939-1349-7_10