Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Manjari, Garg"'
Autor:
Bhaskar Ghawri, Phanibhusan S. Mahapatra, Manjari Garg, Shinjan Mandal, Saisab Bhowmik, Aditya Jayaraman, Radhika Soni, Kenji Watanabe, Takashi Taniguchi, H. R. Krishnamurthy, Manish Jain, Sumilan Banerjee, U. Chandni, Arindam Ghosh
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Experiments on twisted bilayer graphene point to various interaction-induced phases, including the non-Fermi liquid, but its unambiguous assignment remains challenging. Here, using simultaneous transport and thermoelectric power measurements, the aut
Externí odkaz:
https://doaj.org/article/8b07fd152b8341ce82c69951d48842d5
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-10 (2018)
Abstract Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work. Surface potential mapping at the MoS2/GaN heterojunction is done using K
Externí odkaz:
https://doaj.org/article/4b16e92056b849fd920403b9e70cb2f4
Publikováno v:
AIP Advances, Vol 6, Iss 1, Pp 015206-015206-7 (2016)
Current-voltage (I-V) measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu) Schottky diodes fabricated on Gallium Nitride (GaN) epitaxial films. An ideality factor of 1.7
Externí odkaz:
https://doaj.org/article/4c3a8fead54e4350a22893993961b875
Autor:
Tejas R. Naik, Ambali Alka, Mangalampalli Ravikanth, Valipe Ramgopal Rao, Rajendra Singh, Manjari Garg, Shuchi Kaushik, Bhera Ram Tak
Publikováno v:
ACS Applied Electronic Materials. 2:739-746
A direct wide bandgap of 6.2 eV, high temperature robustness, and radiation hardness make aluminum nitride (AlN) a preferable semiconductor for deep ultraviolet (UV) photodetection. However, the pe...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dcfcde37571da74c9f31977159d319b
https://doi.org/10.1021/acsaelm.9b00811
https://doi.org/10.1021/acsaelm.9b00811
Publikováno v:
Nanoscale. 12:23817-23823
We demonstrate a novel form of transfer characteristics in substrate engineered MoS2 field effect transistors. Robust hysteresis with stable threshold voltages and a large gate voltage window is observed, which is suppressed at low temperatures. We a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64b9bf0c69bfff3e7765cd8be7027eff
https://doi.org/10.1039/d0nr05861k
https://doi.org/10.1039/d0nr05861k
Autor:
Takashi Taniguchi, Radhika Soni, Sumilan Banerjee, H. R. Krishnamurthy, Phanibhusan S. Mahapatra, U. Chandni, Manjari Garg, Shinjan Mandal, Arindam Ghosh, Manish Jain, Bhaskar Ghawri, Kenji Watanabe, Saisab Bhowmik, Aditya Jayraman
Publikováno v:
Nature communications. 13(1)
The planar assembly of twisted bilayer graphene (tBLG) hosts multitude of interaction-driven phases when the relative rotation is close to the magic angle (θm = 1.1∘). This includes correlation-induced ground states that reveal spontaneous symmetr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6945562844bff4561a4b945f50bf0a3a
https://pubmed.ncbi.nlm.nih.gov/35314702
https://pubmed.ncbi.nlm.nih.gov/35314702
Publikováno v:
Journal of Alloys and Compounds. 806:852-857
The performance of the AlGaN/GaN heterostructure based devices depends largely upon electrical behavior of Schottky contact which controls the current flowing through the channel. In this work, electrical behavior of Copper (Cu) Schottky diodes on Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea3e9f3eb4f493bef80eba417b2d04be
https://doi.org/10.1016/j.jallcom.2019.07.234
https://doi.org/10.1016/j.jallcom.2019.07.234
Publikováno v:
IEEE Transactions on Electron Devices. 66:2036-2039
In this brief, we present a novel surface modification process for gallium nitride (GaN) epitaxial films leading to enhanced ultraviolet (UV) photodetection. The adsorption of a layer of thiol-functionalized porphyrin-based organic molecules on the G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bd48879872fd626385927e6205c8f05
https://doi.org/10.1109/ted.2019.2901022
https://doi.org/10.1109/ted.2019.2901022
Publikováno v:
ACS Applied Materials & Interfaces. 11:12017-12026
Organic molecular monolayers (MoLs) have been used for improving the performance of various electronic device structures. In this work, the concept of organic molecular surface modification is applied for improving the performance of GaN-based metal-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c564bbcd362003f8050efcd0155f028
https://doi.org/10.1021/acsami.8b20694
https://doi.org/10.1021/acsami.8b20694
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q3149-Q3153
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6b0b5b2049e3bc505cda0f78be3de5d
https://doi.org/10.1149/2.0291907jss
https://doi.org/10.1149/2.0291907jss