Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Manish Kumar Hooda"'
Publikováno v:
Materials Today: Proceedings. 74:307-313
Publikováno v:
Plasmonics. 18:1-8
A design of plasmonic coupler, composed of metal hole arrays and germanium spacer layer, integrated with quantum well infrared photodetector structure is presented. Insertion of germanium spacer layer in this hybrid structure enhances absorption and
Publikováno v:
Journal of Optics. 52:355-364
Publikováno v:
Embracing Business Sustainability Through Innovation and Creativity in the Service Sector ISBN: 9781668467329
Digitalization of financial services has stimulated regulatory and regulatory concerns, technological progress, new capacities and client expectations, and has exposed the sector to competition. A dramatic, expensive, and risky turning moment challen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c0f405393d835161c720aeb09418f26
https://doi.org/10.4018/978-1-6684-6732-9.ch013
https://doi.org/10.4018/978-1-6684-6732-9.ch013
Publikováno v:
ECS Transactions. 107:9905-9914
It has been demonstrated in past studies that doping concentration of photo-absorbing layer has a significant impact on the electrical characteristic of MSM detectors. However, effect of doping concentration on threshold voltage and over desired RB (
Publikováno v:
Asian Journal of Convergence in Technology. 8:15-17
Publikováno v:
ISSS Journal of Micro and Smart Systems. 11:417-426
Publikováno v:
Silicon. 14:4277-4282
In this article, we report the RF/DC performance of 250 nm gate length AlGaN/GaN High Electron Mobility Transistor (HEMT) on a Silicon wafer. The GaN HEMT on Si wafer is designed and simulated using the Synopsys TCAD tool. A comprehensive analysis of
Publikováno v:
Journal of the Optical Society of America B. 40:789
A broadband cavity architecture for ultra-thin type-II superlattice (T2SL) mid-infrared detectors is designed by exploiting coordinated coupling of the surface plasmon polariton mode and cavity mode in an Au-antenna/detector/highly doped semiconducto
Publikováno v:
International Journal on Smart Sensing and Intelligent Systems. 15
In most past studies, MSM (Metal–Semiconductor–Metal) detectors with the varying area have been investigated for varying number of fingers (metal electrodes) of equal width (W) and spacing (S). Therefore, there is a need to investigate fixed area