Zobrazeno 1 - 10
of 157
pro vyhledávání: '"Mani, R G"'
Publikováno v:
Physical Review B 94, 035305 (2016)
We present an experimental study of the microwave power and the linear polarization angle dependence of the microwave-induced magnetoresistance oscillations in the high-mobility GaAs/AlGaAs two-dimensional electron system. Experimental results show t
Externí odkaz:
http://arxiv.org/abs/1611.00641
Publikováno v:
Appl. Phys. Lett. 107, 172103 (2015)
This study examines the magnetotransport response observed in flakes of the 3D topological insulator (TI) Bi2Te3, including indium superconducting electrodes, and demonstrates two critical transitions in the magnetoresistive response with decreasing
Externí odkaz:
http://arxiv.org/abs/1602.04371
Linear polarization angle, $\theta$, dependent measurements of the microwave radiation-induced oscillatory magnetoresistance, $R_{xx}$, in high mobility GaAs/AlGaAs 2D electron devices have shown a $\theta$ dependence in the oscillatory amplitude alo
Externí odkaz:
http://arxiv.org/abs/1602.04114
Publikováno v:
Phys. Rev. B 89, 155307, Published 8 April 2014
We report the results of a combined microwave polarization-dependence and power-dependence study of the microwave-radiation-induced magnetoresistance oscillations in high mobility GaAs/AlGaAs heterostructure devices at liquid helium temperatures. The
Externí odkaz:
http://arxiv.org/abs/1411.5311
Publikováno v:
Appl. Phys. Lett. 105, 191609 (2014)
We examine the role of the microwave power in the linear polarization angle dependence of the microwave radiation induced magnetoresistance oscillations observed in the high mobility GaAs/AlGaAs two dimensional electron system. Diagonal resistance $R
Externí odkaz:
http://arxiv.org/abs/1411.5315
Autor:
Mani, R. G., Kriisa, A.
Publikováno v:
Sci. Rep. 3, 3478 (2013)
Negative diagonal magneto-conductivity/resistivity is a spectacular- and thought provoking- property of driven, far-from-equilibrium, low dimensional electronic systems. The physical response of this exotic electronic state is not yet fully understoo
Externí odkaz:
http://arxiv.org/abs/1312.5026
Publikováno v:
Nature Communications 3:996 (2012)
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the spin prop
Externí odkaz:
http://arxiv.org/abs/1212.0329
Publikováno v:
Phys. Rev. B 85, 205315 (2012)
Light-matter coupling is investigated by rotating, by an angle \theta, the polarization of linearly polarized microwaves with respect to the long-axis of GaAs/AlGaAs Hall-bar electron devices. At low microwave power, P, experiments show a strong sinu
Externí odkaz:
http://arxiv.org/abs/1209.5808
Publikováno v:
Phys. Rev. B 84, 085308 (2011)
In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance oscillations. W
Externí odkaz:
http://arxiv.org/abs/1209.5135
Microwave-induced electron heating in the regime of radiation-induced magnetoresistance oscillations
We examine the influence of microwave photoexcitation on the amplitude of Shubnikov-de Haas (SdH) oscillations in a two dimensional GaAs/AlGaAs electron system in a regime where the cyclotron frequency, $\omega_{c}$, and the microwave angular frequen
Externí odkaz:
http://arxiv.org/abs/1102.0319