Zobrazeno 1 - 10
of 2 086
pro vyhledávání: '"Mangin S"'
Autor:
Salomoni, D., Peng, Y., Farcis, L., Auffret, S., Hehn, M., Malinowski, G., Mangin, S., Dieny, B., Buda-Prejbeanu, L. D., Sousa, R. C., Prejbeanu, I. L.
Switching of magnetic tunnel junction using femto-second laser enables a possible path for THz frequency memory operation, which means writing speeds 2 orders of magnitude faster than alternative electrical approaches based on spin transfer or spin o
Externí odkaz:
http://arxiv.org/abs/2305.15135
Autor:
Peng, Y., Salomoni, D., Malinowski, G., Zhang, W., Hohlfeld, J., Buda-Prejbeanu, L. D., Gorchon, J., Vergès, M., Lin, J. X., Sousa, R. C., Prejbeanu, I. L., Mangin, S., Hehn, M.
Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents the ability to reverse the magnetic moment of a nanostructure using a femtosecond single laser pulse. It is an ultrafast method to manipulate magnetization without the use of
Externí odkaz:
http://arxiv.org/abs/2212.13279
Autor:
Bouhani, H., Endichi, A., Kumar, D., Copie, O., Zaari, H., David, A., Fouchet, A., Prellier, W., Mounkachi, O., Balli, M., Benyoussef, A., Kenz, A. El, Mangin, S.
Combining multiple degrees of freedom in strongly-correlated materials such as transition-metal oxides would lead to fascinating magnetic and magnetocaloric features. Herein, the strain effects are used to markedly tailor the magnetic and magnetocalo
Externí odkaz:
http://arxiv.org/abs/2008.09193
Publikováno v:
Phys. Rev. B 102, 064425 (2020)
Iridium is a very promising material for spintronic applications due to its interesting magnetic properties such as large RKKY exchange coupling as well as its large spin-orbit coupling value. Ir is for instance used as a spacer layer for perpendicul
Externí odkaz:
http://arxiv.org/abs/2007.12413
Autor:
Barate, P., Liang, S., Zhang, T. T., Frougier, J., Vidal, M., Renucci, P., Devaux, X., Xu, B., Jaffrès, H., George, J. M., Marie, X., Hehn, M., Mangin, S., Zheng, Y., Amand, T., Tao, B., Han, X. F., Wang, Z., Lu, Y.
Publikováno v:
Applied Physics Letters, 105, 012404 (2014)
An efficient electrical spin injection into an InGaAs/GaAs quantum well light emitting diode is demonstrated thanks to a CoFeB/MgO spin injector. The textured MgO tunnel barrier is fabricated by two different techniques: sputtering and molecular beam
Externí odkaz:
http://arxiv.org/abs/2004.03292
Autor:
Guillemard, C., Zhang, W., Malinowski, G., de Melo, C., Gorchon, J., Petit-Watelot, S., Ghanbaja, J., Mangin, S., Fèvre, P. Le, Bertran, F., Andrieu, S.
Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping responsible for the spin angular momentum dissipation. Both of them are expecte
Externí odkaz:
http://arxiv.org/abs/2002.02686
Akademický článek
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Akademický článek
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K zobrazení výsledku je třeba se přihlásit.
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Autor:
Cerqueira, C., Qin, J. Y., Dang, H., Djeffal, A., Breton, J. -C. Le, Hehn, M., Rojas-Sanchez, J. -C., Devaux, X., Suire, S., Migot, S., Schieffer, P., Mussot, J. -G., Laczkowski, P., Anane, A., Petit-Watelot, S., Stoffel, M., Mangin, S., Liu, Z., Cheng, B. W., Han, X. F., Jaffrès, H., George, J. -M., Lu, Y.
Publikováno v:
NanoLett. 19, 90(2019)
Due to the difficulty to grow high quality semiconductors on ferromagnetic metals, the study of spin diffusion transport in Si was only limited to lateral geometry devices. In this work, by using ultra-high vacuum wafer-bonding technique, we have suc
Externí odkaz:
http://arxiv.org/abs/1902.03652
Autor:
Iihama, S., Xu, Y., Deb, M., Malinowski, G., Hehn, M., Gorchon, J., Fullerton, E. E., Mangin, S.
All-optical ultrafast magnetization switching in magnetic material thin film without the assistance of an applied external magnetic field is being explored for future ultrafast and energy-efficient magnetic storage and memories. It has been shown tha
Externí odkaz:
http://arxiv.org/abs/1805.02432