High- k dielectrics for future generation memory devices (Invited Paper)

Autor: Kittl, J.A., Opsomer, K., Popovici, M., Menou, N., Kaczer, B., Wang, X.P., Adelmann, C., Pawlak, M.A., Tomida, K., Rothschild, A., Govoreanu, B., Degraeve, R., Schaekers, M., Zahid, M., Delabie, A., Meersschaut, J., Polspoel, W., Clima, S., Pourtois, G., Knaepen, W., Detavernier, C., Afanas’ev, V.V., Blomberg, T., Pierreux, D., Swerts, J., Fischer, P., Maes, J.W., Manger, D., Vandervorst, W., Conard, T., Franquet, A., Favia, P., Bender, H., Brijs, B., Van Elshocht, S., Jurczak, M., Van Houdt, J., Wouters, D.J.

Publikováno v: In Microelectronic Engineering 2009 86(7):1789-1795

Integration of SiGe HBT with $\text{f}_{\text{T}}=305\ \text{GHz},\ \text{f}_{\max}=537 \text{GHz}$ in 130nm and 90nm CMOS

Autor: Manger, D., Liebl, W., Boguth, S., Binder, B., Aufinger, K., Dahl, C., Hengst, C., Pribil, A., Oestreich, J., Rohmfeld, S., Rothenhaeusser, S., Tschumakow, D., Boeck, J.

Publikováno v: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1239b3d335212a08af445e2202d3459c

Composition influence on the physical and electrical properties of SrxTi1-xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes.

Autor: Menou, N., Popovici, M., Clima, S., Opsomer, K., Polspoel, W., Kaczer, B., Rampelberg, G., Tomida, K., Pawlak, M. A., Detavernier, C., Pierreux, D., Swerts, J., Maes, J. W., Manger, D., Badylevich, M., Afanasiev, V., Conard, T., Favia, P., Bender, H., Brijs, B.

Publikováno v: Journal of Applied Physics; Nov2009, Vol. 106 Issue 9, p094101-1-094101-7, 7p, 1 Color Photograph, 3 Black and White Photographs, 1 Chart, 13 Graphs

Q.ANTUM – Q-Cells Next Generation High-Power Silicon Cell & Module Concept

Autor: Engelhart, P., Manger, D., Klöter, B., Hermann, S., Stekolnikov, A.A., Peters, S., Ploigt, H.-C., Eifler, A., Klenke, C., Mohr, A., Zimmermann, G., Barkenfelt, B., Suva, K., Wendt, J., Kaden, T., Rupp, S., Rychtarik, D., Fischer, M., Müller, J.W., Wawer, P.

26th European Photovoltaic Solar Energy Conference and Exhibition; 821-826
In this paper we report on our latest R&D cell and module results based on double-side contacted ptype Si solar cells characterised by a dielectric passivated rear surfac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc897f5ba0370e627caaf2cb6599129f

Pitch fragmentation induced odd/even effects in a 36 nm floating gate NAND technology.

Autor: Beug, M.F., Parascandola, S., Hoehr, T., Muller, T., Reichelt, R., Muller-Meskamp, L., Geiser, P., Geppert, T., Bach, L., Bewersdorff-Sarlette, U., Kenny, O., Brandl, S., Marschner, T., Meyer, S., Riedel, S., Specht, M., Manger, D., Knofler, R., Knobloch, K., Kratzert, P.

Publikováno v: 2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS); 2008, p1-5, 5p