Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Manfredo Manfredi"'
Autor:
Manfredo Manfredi, Maura Pavesi
Publikováno v:
physica status solidi (a). 201:1594-1599
The processes related to the presence of hot carriers in power AlGaAs/GaAs heterostructure field effect transistors (HFET) have been studied by means of optical (electroluminescence) and electrical techniques. Electroluminescence spectra evidence the
Publikováno v:
Semiconductor Science and Technology. 19:45-49
Electroluminescence studies were carried out as a function of bias and temperature to understand the nature of deep centres in 6H–SiC n-channel junction field-effect transistors (FETS) for high-power applications. Vanadium impurities in different c
Autor:
Paolo Lugli, Manfredo Manfredi, Claudio Canali, Aldo Di Carlo, G. Zandler, Andrea Neviani, Enrico Zanoni, Roger J. Malik
Publikováno v:
Semiconductor Science and Technology. 13:858-863
We present a detailed investigation of light emission phenomena connected with the presence of hot carriers in AlGaAs/GaAs heterojunction bipolar transistors. Electrons heated by the strong electric field at the base-collector junction lead to both i
Autor:
C. Lanzieri, Roberto Menozzi, Manfredo Manfredi, C. Ghezzi, Claudio Canali, M. Peroni, Maura Pavesi
Publikováno v:
IEEE Transactions on Electron Devices. 45:2261-2267
We show in this work that, although designing Al/sub x/Ga/sub 1-x/As/GaAs HFET's for microwave power applications requires a large barrier layer bandgap (hence x>0.2), the presence of a large concentration of electrically active DX centers in the bar
Autor:
Maura Pavesi, G. Berthold, M. Pecchini, Enrico Zanoni, J.A. del Alamo, Manfredo Manfredi, S.R. Bahl, Claudio Canali
Publikováno v:
IEEE Transactions on Electron Devices. 42:752-759
We present measurements on impact ionization effects, real space transfer of holes and electrons, and light emission occurring in n-channel InAlAs/InGaGs heterostructure Field-Effect Transistors based on InP operated at high electric fields and at di
Publikováno v:
Semiconductor Science and Technology. 9:651-658
This paper reviews the most recent experimental results concerning the characterization of hot-electron effects and light emission in GaAs MESFETS, AlGaAs/GaAs and AlGaAs/InGaAs high electron mobility transistors (HEMTS), and AlGaAs/GaAs heterojuncti
Autor:
Manfredo Manfredi, D.C. Streit, Claudio Canali, C. Tedesco, S. Bigliardi, W.T. Anderson, Enrico Zanoni
Publikováno v:
IEEE Transactions on Electron Devices. 40:1211-1214
Impact ionization and light emission have been studied in pseudomorphic AlGaAs/InGaAs HEMTs characterized by delta doping in the undoped AlGaAs layer and by additional planar doping within the InGaAs channel, and suitable for high-power applications.
Publikováno v:
IEEE Transactions on Electron Devices. 40:577-582
Spectrally resolved absolute measurements of hot-carrier-induced photon emission in silicon are reported. In order to avoid uncertainties in geometrical and physical parameters, the simplest conceivable device, an avalanching p-n junction, was used.
Autor:
Tetsuzo Ueda, M. Scamperle, Enrico Zanoni, Tsuneo Tanaka, Manfredo Manfredi, Maura Pavesi, Gaudenzio Meneghesso, Daisuke Ueda, Matteo Meneghini, Hidetoshi Ishida
This paper reports an extensive investigation of the luminescence processes in GaN-based gate injection transistors (GITs). The results of the analysis indicate that: (i) GITs operating in on-state conditions can emit a weak luminescence signal; (ii)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2da1256b5826f188578c14769c1d3620
http://hdl.handle.net/11577/2446619
http://hdl.handle.net/11577/2446619
Autor:
Augusto Tazzoli, Enrico Ranzato, Enrico Zanoni, Ulrich Zehnder, Berthold Hahn, Nicola Trivellin, Manfredo Manfredi, Maura Pavesi, Matteo Meneghini, Gaudenzio Meneghesso, Rainer Butendeich
This paper describes an extensive analysis of the degradation of InGaN-based LEDs submitted to reverse-bias stress and Electrostatic Discharge events. Results described within the paper indicate that: (i) reverse-bias current flows through localized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ee2b7217ef0262d448bfbbe6a9820ba
http://hdl.handle.net/11577/2466379
http://hdl.handle.net/11577/2466379