Zobrazeno 1 - 10
of 334
pro vyhledávání: '"Manfredo Manfredi"'
Autor:
Bastianini, Guido
Publikováno v:
Aegyptus, 2010 Jan 01. 90, 207-220.
Externí odkaz:
https://www.jstor.org/stable/43486239
Autor:
RAVESI, GIACOMO
Il saggio analizza il percorso cinematografico dell'animatore italiano Manfredo Manfredi. Nell’ambito dell’animazione italiana il cinema di Manfredo Manfredi rappresenta uno dei rari casi di fertile e duratura relazione tra lavori d’artista e c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3668::15386268678034bdccc8c7c461363d20
https://hdl.handle.net/11590/302335
https://hdl.handle.net/11590/302335
Autor:
Dorandi, Tiziano
Publikováno v:
Revue des Études Grecques, 2002 Jan 01. 115(1), 431-432.
Externí odkaz:
https://www.jstor.org/stable/44260375
Autor:
Husson, Geneviève
Publikováno v:
Revue des Études Grecques, 1984 Jan 01. 97(460/461), 277-278.
Externí odkaz:
https://www.jstor.org/stable/44263838
Autor:
Manfredo Manfredi, Maura Pavesi
Publikováno v:
physica status solidi (a). 201:1594-1599
The processes related to the presence of hot carriers in power AlGaAs/GaAs heterostructure field effect transistors (HFET) have been studied by means of optical (electroluminescence) and electrical techniques. Electroluminescence spectra evidence the
Publikováno v:
Semiconductor Science and Technology. 19:45-49
Electroluminescence studies were carried out as a function of bias and temperature to understand the nature of deep centres in 6H–SiC n-channel junction field-effect transistors (FETS) for high-power applications. Vanadium impurities in different c
Autor:
Paolo Lugli, Manfredo Manfredi, Claudio Canali, Aldo Di Carlo, G. Zandler, Andrea Neviani, Enrico Zanoni, Roger J. Malik
Publikováno v:
Semiconductor Science and Technology. 13:858-863
We present a detailed investigation of light emission phenomena connected with the presence of hot carriers in AlGaAs/GaAs heterojunction bipolar transistors. Electrons heated by the strong electric field at the base-collector junction lead to both i
Autor:
C. Lanzieri, Roberto Menozzi, Manfredo Manfredi, C. Ghezzi, Claudio Canali, M. Peroni, Maura Pavesi
Publikováno v:
IEEE Transactions on Electron Devices. 45:2261-2267
We show in this work that, although designing Al/sub x/Ga/sub 1-x/As/GaAs HFET's for microwave power applications requires a large barrier layer bandgap (hence x>0.2), the presence of a large concentration of electrically active DX centers in the bar
Autor:
Maura Pavesi, G. Berthold, M. Pecchini, Enrico Zanoni, J.A. del Alamo, Manfredo Manfredi, S.R. Bahl, Claudio Canali
Publikováno v:
IEEE Transactions on Electron Devices. 42:752-759
We present measurements on impact ionization effects, real space transfer of holes and electrons, and light emission occurring in n-channel InAlAs/InGaGs heterostructure Field-Effect Transistors based on InP operated at high electric fields and at di
Publikováno v:
Semiconductor Science and Technology. 9:651-658
This paper reviews the most recent experimental results concerning the characterization of hot-electron effects and light emission in GaAs MESFETS, AlGaAs/GaAs and AlGaAs/InGaAs high electron mobility transistors (HEMTS), and AlGaAs/GaAs heterojuncti