Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Manfredi, Manfredo"'
Autor:
Manfredi, Manfredo
Publikováno v:
Rivista degli studi orientali, 2012 Jan 01. 85(1/4), 329-337.
Externí odkaz:
https://www.jstor.org/stable/43927157
Autor:
Manfredi, Manfredo
Publikováno v:
Aegyptus, 2007 Jan 01. 87, 9-12.
Externí odkaz:
https://www.jstor.org/stable/41217474
Autor:
Rossi, Francesca, Pavesi, Maura, Meneghini, Matteo, Salviati, Giancarlo, Manfredi, Manfredo, Meneghesso, Gaudenzio, Castaldini, Antonio, Cavallini, Anna, Rigutti, Lorenzo, Strass, Uwe, Zehnder, Ulrich, Zanoni, Enrico
Publikováno v:
Journal of Applied Physics; 3/1/2006, Vol. 99 Issue 5, p053104, 7p, 1 Chart, 11 Graphs
Autor:
Manfredi, Manfredo
Publikováno v:
Aegyptus, 1984 Jan 01. 64(1/2), 237-240.
Externí odkaz:
https://www.jstor.org/stable/41216636
Autor:
Meneghesso, Gaudenzio, Mion, Alvise, Haddab, Youcef, Pavesi, Maura, Manfredi, Manfredo, Canali, Claudio, Zanoni, Enrico
Publikováno v:
Journal of Applied Physics; 12/1/1997, Vol. 82 Issue 11, p5547, 8p, 16 Graphs
Autor:
Zanoni, Enrico, Paccagnella, Alessandro, Pisoni, Pietro, Telaroli, Paolo, Tedesco, Carlo, Canali, Claudio, Testa, Nicoletta, Manfredi, Manfredo
Publikováno v:
Journal of Applied Physics; 7/1/1991, Vol. 70 Issue 1, p529, 3p, 5 Graphs
Autor:
Cova, Paolo, Chioato, Elena, Conti, P., Dall'Aglio, Sandra, Fantini, F., Manfredi, Manfredo, Menozzi, Roberto, Necchi, Riccardo
Publikováno v:
Cova, Paolo ; Chioato, Elena ; Conti, P. ; Dall'Aglio, Sandra ; Fantini, F. ; Manfredi, Manfredo ; Menozzi, Roberto ; Necchi, Riccardo (1994) Light emission spectra of commercial pseudomorphic HEMTs biased in the impact ionization regime. In: Gallium Arsenide Applications Symposium. GAAS 1994, 28-30 April 1994, Turin, Italy.
The aim of this investigation is to study hot electron phenomena leading to impact ionization and light emission in commercial InGaAs-channel pseudomorphic HEMTs. Optical measurements have been performed at several temperatures by rneans of a single-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94bdc43c34ba1c5a5eec9b4ca94550bb
http://amsacta.unibo.it/1829/
http://amsacta.unibo.it/1829/
Autor:
Zanoni, Enrico, Bigliardi, Stefano, Capelletti, Rosanna, Lugli, Paolo, Magistrali, Fabrizio, Manfredi, Manfredo, Paccagnella, Alessandro, Testa, Nicoletta, Canali, C.
Publikováno v:
Zanoni, Enrico ; Bigliardi, Stefano ; Capelletti, Rosanna ; Lugli, Paolo ; Magistrali, Fabrizio ; Manfredi, Manfredo ; Paccagnella, Alessandro ; Testa, Nicoletta ; Canali, C. (1990) Hot-carrier-induced radiation emission in AlGaAs/GaAs high electron mobility transistors and GaAs MESFETs. In: Gallium Arsenide Applications Symposium. GAAS 1990, 19-20 April 1990, Rome, Italy.
New results are presented concerning the spectral distribution in the 1.7 - 2.9 eV range of the electromagnetic radiation emitted by 0.5 mm GaAs MESFETs and 0.3 mm AlGaAs/GaAs HEMTs biased at high drain voltages (> 4.0 V). The energy distribution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b78dac1dfe0f069c0f4b28211c758257
http://amsacta.unibo.it/1905/
http://amsacta.unibo.it/1905/
Autor:
Zanichelli, Massimiliano, Pavesi, Maura, Zappettini, Andrea, Marchini, Laura, Manfredi, Manfredo
Publikováno v:
2008 IEEE Nuclear Science Symposium Conference Record; 2008, p217-221, 5p
Akademický článek
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