A 7nm CMOS technology platform for mobile and high performance compute application

Autor: Dhruv Singh, A. Gassaria, V. Chauhan, A. da Silva, P. Lindo, Daniel J. Dechene, M. Gribelyuk, I. Ahsan, M. Hasan, Judson R. Holt, Rod Augur, Jaeger Daniel, G. Northrop, G. Gomba, Ghosh Somnath, H. Narisetty, Basanth Jagannathan, Ting-Hsiang Hung, P. Liu, Y. Zhong, T. Gordon, Y. Fan, C. Schiller, A. Blauberg, O. Patterson, B. Morganfeld, Andres Bryant, J. Choo, T. Nigam, B. Senapati, V. Sardesai, N. Baliga, C. An, I. Ramirez, Rishikesh Krishnan, Arkadiusz Malinowski, S. Lucarini, Z. Sun, Sadanand V. Deshpande, R. Bhelkar, Mahender Kumar, Kong Boon Yeap, D. Conklin, Q. Fang, R. Gauthier, Purushothaman Srinivasan, S. Crown, M. Ozbek, Linjun Cao, G. Han, Z. Song, L. Huang, C. Serrau, R. Sweeney, M. Tan, Keith Donegan, Souvick Mitra, A. Zainuddin, P. Agnello, Balasubramanian S. Haran, Haifeng Sheng, B. Greene, A. Hassan, Tabakman Keith, Xin Wang, Sanjay Parihar, L. Cheng, M. Lagus, Jessica Dechene, D. Xu, G. Gifford, M. Zhao, Jeyaraj Antony Johnson, Y. Yan, Rick Carter, Manoj Joshi, W. Kim, Gabriela Dilliway, Jack M. Higman, S. Kalaga, Kai Zhao, Jinping Liu, A. Ogino, M. Lipinski, Amanda L. Tessier, Garo Jacques Derderian, S. Madisetti, N. Shah, Christopher Ordonio, M. Aminpur, Rakesh Ranjan, S. Saudari, Christa Montgomery, Tony Tae-Hyoung Kim, Jeric Sarad, Jae Gon Lee, Bharat Krishnan, Joseph F. Shepard, L. Hu, J. Sporre, Akil K. Sutton, Eswar Ramanathan, Cathryn Christiansen, J.H. Han, J. Lemon, Patrick Justison, Natalia Borjemscaia, Scott C. Johnson, B. Cohen, Kan Zhang, Srikanth Samavedam, G. Xu, T. Xuan, Unoh Kwon, C. Meng, Katsunori Onishi, Y. Shi, C. Huang, R. Coleman, Manfred Eller, Shreesh Narasimha, B. Kannan, J. Yang, Vivek Joshi, W. Ma, Christopher D. Sheraw, A. K. M. Mahalingam, Craig Child, E. Woodard, Tao Chu, Y. Jin, D. K. Sohn, Hasan M. Nayfeh, Mary Claire Silvestre, M. Lingalugari, G. Biery, Tian Shen, Carl J. Radens, E. Kaste, C-H. Lin, K. Han, K. Anil, Ankur Arya, Mehta Jaladhi, Jia Zeng, S.L. Liew, Michael V. Aquilino, M. Yu, M. Chen, Rohit Pal, E. Maciejewski, Stephan Grunow, Robert Fox, Rinus T. P. Lee

Publikováno v: 2017 IEEE International Electron Devices Meeting (IEDM).

We present a fully integrated 7nm CMOS platform featuring a 3rd generation finFET architecture, SAQP for fin formation, and SADP for BEOL metallization. This technology reflects an improvement of 2.8X routed logic density and >40% performance over th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5545f519d7dcbb19a8a64d95e77053fd
https://doi.org/10.1109/iedm.2017.8268476

Modeling the impact of the vertical doping profile on FinFET SRAM VT mismatch

Autor: Seong-Yeol Mun, Shesh Mani Pandey, Xusheng Wu, Manfred Eller, Sri Samavedam, Sanjay Parihar, David Burnett

Publikováno v: 2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

The basic multi-gate Vt variation model for uniform doping is extended to support a 2-region fin doping methodology that provides good agreement with Vt mismatch measurements as well as useful insights into how the non-uniform fin doping impacts the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83a6893d8a9b62d2498c577fc8020083
https://doi.org/10.1109/s3s.2016.7804381

Shallow Trench Isolation for the 45-nm CMOS Node and Geometry Dependence of STI Stress on CMOS Device Performance

Autor: Karl-Heinz Bach, M. Galiano, Manfred Eller, Richard A. Conti, R. Lindsay, A.T. Tilke, William C. Wille, Chris Stapelmann, A. Jain, Roland Hampp, R. Jaiswal

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 20:59-67

In the present work, a high aspect ratio process (HARP) using a new O3/TEOS based sub atmospheric chemical vapor deposition process was implemented as STI gapfill in sub-65-nm CMOS. Good gapfill performance up to aspect ratios greater than 10:1 was d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eb17de55455adecfd3578ae1b7747b9d
https://doi.org/10.1109/tsm.2007.896632

Advanced RMG module to improve AC/DC performance for 14nm FinFETs and beyond

Autor: Changyong Xiao, Andy Wei, Dina H. Triyoso, J. Lian, Edmund Banghart, W. H. Tong, Y. Liu, Deepasree Konduparthi, Rohit Pal, Seong Yeol Mun, B. Liu, M. H. Nam, H. V. Meer, Manfred Eller, Girish Bohra, Chloe Yong, X. Zhang, Shesh Mani Pandey, Rick Carter, Manoj Joshi, Xusheng Wu, Mitsuhiro Togo, Xiaoli He, Srikanth Samavedam

Publikováno v: 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

An advanced Replacement Metal Gate (RMG) module was developed for 14nm node FinFETs and beyond. STI oxide extra recess increases on-current without any dedicated Source and Drain (SD) optimization. Tungsten (W) selective etch recesses work function m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::24fcdff540092d6707ecb3d6e6403991
https://doi.org/10.1109/vlsit.2014.6894392

New layout dependency in high-k/Metal Gate MOSFETs

Autor: R. Divakaruni, Jaeger Daniel, Richard A. Wachnik, N-S. Kim, M. Celik, Y. Takasu, J. Sudijono, S. Mori, Melanie J. Sherony, H. Nishimura, Michael P. Chudzik, K-C. Lee, Y-W. Teh, Liyang Song, Ricardo A. Donaton, J.-P. Han, E. Kaste, T. Iwamoto, Knut Stahrenberg, Vijay Narayanan, J. Liang, Fumiyoshi Matsuoka, Manfred Eller, S. Kohler, K. Kim, JiYeon Ku, Katsura Miyashita, M-H. Na, S. Johnson, Wai-kin Li, Jongpal Kim, H. V. Meer, Christophe Bernicot, Ron Sampson, Deleep R. Nair, Franck Arnaud, M. Sekine, W. Neumueller, S. Miyake, Masafumi Hamaguchi, Kathy Barla, J.H. Park, H. Kothari

Publikováno v: 2011 International Electron Devices Meeting.

We report a new N/PFET Gate Patterning Boundary Proximity layout dependent effect in high-k dielectric/Metal Gate (HK/MG) MOSFETs which causes anomalous threshold voltage (V t ) modulation for the first time. We investigated the mechanism by using sp

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a6c4ef6fa05863728895d8e57c28c48a
https://doi.org/10.1109/iedm.2011.6131614