Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Manel Bouhouche"'
Autor:
Manel Bouhouche, Saida Latreche
Publikováno v:
Electronics, Vol 25, Iss 2, Pp 57-64 (2021)
This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT). To verify the radiation tolerance of the proposed LNA, a total of four cascode configurations wer
Externí odkaz:
https://doaj.org/article/ae4b883f1e304a9e8f1a5a70e18b9de4
Mixed-mode analysis of the sensitivity of a radiofrequency oscillator disturbed by parasitic signals
Autor:
Christian Gontrand, Manel Bouhouche, José-Cruz Nuñez Perez, Olivier Valorge, Francis Calmon, Jacques Verdier, Saïda Latreche
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 22:23-42
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa215b0f06c557e4ad8b820d1c722a62
https://doi.org/10.1002/jnm.693
https://doi.org/10.1002/jnm.693
Autor:
Manel Bouhouche, Jose Cruz Nuñez-Perez, Saida Latreche, Maya Lakhdara, Christian Gontrand, Jacques Verdier
Publikováno v:
Semiconductor Science and Technology. 24:045010
We present in this paper an electrical study centred on NPN heterojunction bipolar transistors (HBTs), realized in an industrial BiCMOS SiGe:C process, featuring high attractive performances (ft > 200 GHz) in terms of microwave behaviour and low-freq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f1554dadc0e4d69a825383e3c5b8a11
https://doi.org/10.1088/0268-1242/24/4/045010
https://doi.org/10.1088/0268-1242/24/4/045010