Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Maneesha Rupakula"'
Autor:
Maneesha Rupakula, Junrui Zhang, Francesco Bellando, Fabien Wildhaber, Clarissa Convertino, Heinz Schmid, Kirsten Emilie Moselund, Adrian Mihai Ionescu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 773-779 (2020)
In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic
Externí odkaz:
https://doaj.org/article/d256459bf51941fa8f91fa1036da1368
Autor:
Junrui Zhang, Fabien Wildhaber, Adrian M. Ionescu, Johan Longo, Francesco Bellando, Maneesha Rupakula, Hoël Guerin, G. Herment, E. Garcia Cordero
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
This paper reports for the first time, smart 3D-Extended-Metal-Gate Ion-Sensitive-Field-Effect-Transistors (3D-EMG-ISFETs), with unique figures of merit: (i) extremely-low-power (down to a record value of 2 pW per sensor under excellent linearity), (
Autor:
Francesco Bellando, Guillaume Herment, Fabien Wildhaber, Adrian M. Ionescu, Johan Longo, Maneesha Rupakula, Hoël Guerin, Erick Garcia Cordero, Junrui Zhang
Publikováno v:
ACS Sensors
Ion sensitive field effect transistors (ISFETs) form a very attractive solution for wearable sensors due to their capacity for ultra-miniaturization, low power operation, and very high sensitivity, supported by complementary metal oxide semiconductor
Autor:
Adrian M. Ionescu, Maneesha Rupakula, Heinz Schmid, Junrui Zhang, Francesco Bellando, Kirsten E. Moselund, Fabien Wildhaber, C. Convertino
Publikováno v:
ESSDERC
IEEE Journal of the Electron Devices Society, Vol 8, Pp 773-779 (2020)
IEEE Journal of the Electron Devices Society, Vol 8, Pp 773-779 (2020)
In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favors the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20922931361400b9779d8dcea180470d
https://infoscience.epfl.ch/record/279654
https://infoscience.epfl.ch/record/279654