Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Mandus Fenske"'
Publikováno v:
Journal of Power Sources. 299:162-169
During the discharge of an aprotic Li/O 2 battery solid products assemble inside of the gas diffusion electrodes (GDE). The distribution of these in dependence of pore size of the GDE is investigated by X-ray Photoelectron Spectroscopy (XPS). Depth p
Autor:
Alexej Kreider, Mandus Fenske, Stephan Sell, Katharina Richter, Ingo Grunwald, Christian Tornow, Volkmar Stenzel
Publikováno v:
Applied Surface Science. 273:562-569
This article describes a new strategy for coupling the enzyme horseradish peroxidase to a two-component polyurethane (2C-PUR) coating. A stable polymer conjugate was achieved by combining the enzyme and the 2C-PUR coating which was modified with poly
Autor:
Mathias S. Wickleder, Steffen Gagelmann, Mandus Fenske, Katharina Al-Shamery, Frauke Gerlach, Jörn Bruns
Publikováno v:
Angewandte Chemie International Edition. 51:2199-2203
The title compounds are suitable thermolabile precursors for the respective noble metals with the advantage that they do not lead to carbon contamination of the deposited metals.
Autor:
Katharina Al-Shamery, Mandus Fenske, Steffen Gagelmann, Jörn Bruns, Frauke Gerlach, Mathias S. Wickleder
Publikováno v:
Angewandte Chemie. 124:2242-2246
Autor:
Katharina Al-Shamery, Mathias S. Wickleder, Mandus Fenske, Frauke Gerlach, Jörn Bruns, Steffen Gagelmann
Publikováno v:
ChemInform. 43
The title compounds are suitable thermolabile precursors for the respective noble metals with the advantage that they do not lead to carbon contamination of the deposited metals.
Autor:
T. Fladung, Lutz Kirste, Patrick Waltereit, Marcel Himmerlich, Mandus Fenske, Stefan Müller, Stefan Krischok, Richard Gutt, Klaus Köhler, T. Lim
Publikováno v:
Journal of Applied Physics. 110:083527
AlGaN/GaN-based high electron mobility transistor heterostructures with different GaN cap layer thicknesses were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy. The influence of the different growth methods on the struct