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Autor:
Atuchin VV; Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences , Novosibirsk 630090, Russia.; Functional Electronics Laboratory, Tomsk State University , Tomsk 634050, Russia.; Laboratory of Semiconductor and Dielectric Materials, Novosibirsk State University , Novosibirsk 630090, Russia., Beisel NF; Analytical Laboratory, Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences , Novosibirsk 630090, Russia.; Department of Natural Sciences, Novosibirsk State University , Novosibirsk 630090, Russia., Galashov EN; Department of Applied Physics, Novosibirsk State University , Novosibirsk 630090, Russia., Mandrik EM; Department of Applied Physics, Novosibirsk State University , Novosibirsk 630090, Russia., Molokeev MS; Laboratory of Crystal Physics, Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences , Krasnoyarsk 660036, Russia.; Department of Physics, Far Eastern State Transport University , Khabarovsk 680021, Russia., Yelisseyev AP; Laboratory of High Pressure Minerals and Diamond Deposits, Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences , Novosibirsk 630090, Russia., Yusuf AA; Department of Applied Physics, Novosibirsk State University , Novosibirsk 630090, Russia., Xia Z; School of Materials Sciences and Engineering, University of Science and Technology Beijing , Beijing 100083, China.
Publikováno v:
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2015 Dec 02; Vol. 7 (47), pp. 26235-43. Date of Electronic Publication: 2015 Nov 19.