Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Mandar S. Bhoir"'
Autor:
Mandar S. Bhoir, Thomas Chiarella, Lars Ake Ragnarsson, Jerome Mitard, Valentina Terzeiva, Naoto Horiguchi, Nihar R. Mohapatra
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1217-1224 (2019)
This paper discusses in detail the effects of Sub-10nm fin-width (Wfin) on the analog performance and variability of FinFETs. It is observed through detailed measurements that the transconductance degrades and output conductance improves with the red
Externí odkaz:
https://doaj.org/article/7ec5231a8fcc4f308d70b5c2a1896db4
Publikováno v:
IEEE Transactions on Electron Devices. 67:4691-4695
In this work, we have investigated the influence of ${V}_{\text {t}}$ extraction procedure on overall ${V}_{\text {t}}$ variability of sub-10 nm ${W}_{\text {fin}}$ FinFETs. Using six different ${V}_{\text {t}}$ extraction techniques, we have experim
Autor:
Mandar S. Bhoir, Nihar R. Mohapatra
Publikováno v:
IEEE Transactions on Electron Devices. 67:3035-3041
In this article, the combined effect of BOX thickness ( ${T}_{\text {BOX}}$ ) and ground-plane (GP) doping ( ${N}_{\text {GP}}$ ) on channel carrier mobility and analog figures of merit (FoMs) is investigated. It is reported that the thin BOX along w
Autor:
H. S. Jatana, Soumya Ranjan Panda, Amit K. Singh, Nihar R. Mohapatra, Kumari Neeraj Kaushal, Mandar S. Bhoir
Publikováno v:
IEEE Transactions on Electron Devices. 66:4823-4828
In this article, we have proposed a simple, novel, and cost-effective technique to mitigate the ON-state performance issues in laterally diffused MOS (LDMOS) transistors. We propose a novel technique-LDMOS transistor with source-side underlap (SU), w
Publikováno v:
IEEE Transactions on Electron Devices. 66:861-867
In this paper, we present physical insights into the role of substrate on the anomalous frequency behavior of small-signal transconductance and output conductance in the ultrathin body and buried oxide fully depleted silicon-on-insulator MOS transist
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
A physics-based parameter extraction methodology based on HiSIM-HV2 model is developed to capture the effect of CDG on the performance of LDMOS transistors. The CDG shows up to 30% performance benefit. The physics behind this is investigated using TC
Autor:
Naoto Horiguchi, Jerome Mitard, Mandar S. Bhoir, Lars A. Ragnarsson, Nihar R. Mohapatra, Thomas Chiarella
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
In this work, we have studied the effect of threshold voltage $(\mathbf{V}_{t})$ extraction methods on in-wafer variability of sub-10nm fin-width FinFETs. Using six different $\mathbf{V}_{t}$ extraction techniques, it is experimentally demonstrated t
Autor:
Mandar S. Bhoir, Nihar R. Mohapatra, Thomas Chiarella, Naoto Horiguchi, Jerome Mitard, Lars A. Ragnarsson
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A systematic methodology to segregate different variability sources from electrical measurements, in sub-10nm W fin FinFETs, is proposed. The threshold voltage variation, coming from gate-metal work-function and oxide charge variations, is shown to b
Autor:
Mandar S. Bhoir, Nihar R. Mohapatra, Valentina Terzeiva, Lars-Ake Ragnarsson, Thomas Chiarella, Jerome Mitard, Naoto Horiguchi
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM)
This work experimentally investigates the effect of fm-width $(W_{fin})$ scaling in sub-10nm regime on the analog performance of nFinFETs. It is shown that the device trans-conductance $(g_{m})$ degrades and output conductance $(g_{ds})$ improves wit
Autor:
Mandar S. Bhoir, Nihar R. Mohapatra
Publikováno v:
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
This work investigates, for the first time, the impact of BOX thickness (T box ) and Ground-plane (GP) on the non-linearity of transistors fabricated using UTBB FD-SOI CMOS technology. By extracting 2nd and 3rd order harmonic distortions, we have sho