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In the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe ) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performances spectrometers based on silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::6f13b5eb5e45a80422a7f628460d6eda
https://hdl.handle.net/11587/331126
https://hdl.handle.net/11587/331126
Autor:
M. TRAVERSA, P. PRETE, A. COLA, I. FARELLA, P. PAIANO, LOVERGINE, Nicola, MANCINI, Anna Maria
Publikováno v:
14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), 31 May-6 June 2008, Metz, France, 2008
info:cnr-pdr/source/autori:2)M. Traversa, P. Prete, A. Cola, I. Farella, P. Paiano, N. Lovergine and A.M. Mancini/congresso_nome:14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), 31 May-6 June 2008/congresso_luogo:Metz, France/congresso_data:2008/anno:2008/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:2)M. Traversa, P. Prete, A. Cola, I. Farella, P. Paiano, N. Lovergine and A.M. Mancini/congresso_nome:14th International Conference on Metal-Organic Vapor Phase Epitaxy (ICMOVPE-XIV), 31 May-6 June 2008/congresso_luogo:Metz, France/congresso_data:2008/anno:2008/pagina_da:/pagina_a:/intervallo_pagine
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0e25240ecfb2f1f24090eb2433e18ce3
https://publications.cnr.it/doc/115619
https://publications.cnr.it/doc/115619
Free-standing quasi 1-dimensional (1D) semiconductor nanostructures (nanowires) based on III-V compound semiconductors are considered ideal building blocks for the realization of photonic and electronic nanodevices. Metal-catalyst assisted MOVPE is a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::11b1e7b40ff4ba8cf549167298077e0a
https://hdl.handle.net/11587/333378
https://hdl.handle.net/11587/333378
Autor:
PAIANO, PASQUALE, PRETE, Paola, LOVERGINE, Nicola, MANCINI, Anna Maria, E. SPEISER, W. RICHTER
The morphology, structure and phonon properties of well-aligned and kink-free GaAs nanowires grown on (1¯ 1¯ 1¯)B GaAs are reported. The nanowires were grown at temperatures down to 400°C by Au-catalysed MOVPE using tBuAsH2 and Me3Ga in H2 ambien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::57359f2cb4e3acc8f597dad7a908df62
https://hdl.handle.net/11587/300771
https://hdl.handle.net/11587/300771
The morphology and structure of metalorganic vapour phase epitaxy grown homoepitaxial (1 0 0)ZnTe layers on high-quality substrates grown by the vertical gradient freezing method is reported. Growth below 350 °C leads to surface ridging along a 110
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::ace869f155f05ece2e4f3a382411112b
https://hdl.handle.net/11587/106057
https://hdl.handle.net/11587/106057
Autor:
M. Traversa, P. Prete, T. Di Luccio, G. Scalia, L. Tapfer, LOVERGINE, Nicola, MANCINI, Anna Maria
ZnTe with its 2.26 eV (548.5 nm) direct gap at RT, is an ideal semiconductor for fabrication of efficient light emitting diodes and lasers operating in the pure green region of the visible light (540-580 nm). Until few years ago, the lack of high-qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::f8f2cfc64e13e7de484bade53f8e660c
https://hdl.handle.net/11587/333255
https://hdl.handle.net/11587/333255