Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Manabu Yanagihara"'
Autor:
Tetsuzo Ueda, Manabu Yanagihara
Publikováno v:
The Journal of The Institute of Electrical Engineers of Japan. 139:80-83
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1be20907f89c0b156e478ff989d1b8d8
https://doi.org/10.1541/ieejjournal.139.80
https://doi.org/10.1541/ieejjournal.139.80
Autor:
Manabu Yanagihara, Masaya Mannoh, Hideyuki Okita, Saichiro Kaneko, Michinobu Tsuda, Hisayoshi Matsuo, Kenichiro Tanaka, Yasuhiro Uemoto, Akihiko Nishio, Masayuki Kuroda, Keiichi Matsunaga, Masahiro Hikita, Takahiro Sato, Ayanori Ikoshi, Tatsuo Morita
Publikováno v:
IEEE Transactions on Electron Devices. 64:1026-1031
A new gate recess process technology has been successfully implemented in normally off GaN-based gate injection transistors, in order to improve the process stability. In this process, unlike the conventional gate recess process, the initial AlGaN ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af144d407aea0dc71d8ca99caac6e43
https://doi.org/10.1109/ted.2017.2653847
https://doi.org/10.1109/ted.2017.2653847
Autor:
Masahiro Hikita, Masahiro Toki, Yasuhiro Uemoto, Hiroto Yamagiwa, Ayanori Ikoshi, Kenichiro Tanaka, Kazuki Suzuki, Daijiro Arisawa, Tetsuzo Ueda, Manabu Yanagihara
Publikováno v:
IRPS
Reliability of a GaN-based Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under continuous switching operation is investigated to extract the lifetime under a practical switching application. Switching lifetimes are deduced by varying ambie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9643103594f017b842e32d508e74848e
https://doi.org/10.1109/irps.2018.8353594
https://doi.org/10.1109/irps.2018.8353594
Autor:
Kenichiro Tanaka, Tetsuzo Ueda, Tatsuo Morita, Tsuguyasu Hatsuda, Masahiro Ishida, Masahiro Toki, Masahiro Hikita, Ayanori Ikoshi, Kazuki Yokoyama, Yasuhiro Uemoto, Manabu Yanagihara
Publikováno v:
2017 IEEE International Reliability Physics Symposium (IRPS).
Reliability tests on 600V-rated GaN-based normally-off hybrid-drain-embedded Gate Injection Transistor (HD-GIT) are performed. High-temperature reverse-bias test on HD-GIT reveals that the lifetime is dependent on the leakage current before the relia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ec0fb458dcfbd5b478782126e5cbf61
https://doi.org/10.1109/irps.2017.7936308
https://doi.org/10.1109/irps.2017.7936308
Publikováno v:
physica status solidi (a). 206:1221-1227
In this paper, recent advances in GaN-based transistors for power switching and millimeter wave communications are reviewed. These two applications are emerging in addition to the widely developed power amplifiers at microwave frequencies mainly for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23e99bdf937e64251be20e14d5ddb74c
https://doi.org/10.1002/pssa.200880968
https://doi.org/10.1002/pssa.200880968
Autor:
Tetsuzo Ueda, Hiroaki Ueno, Yasuhiro Uemoto, Manabu Yanagihara, Hisayoshi Matsuo, Daisuke Ueda, Hidetoshi Ishida, Tsuyoshi Tanaka, Masahiro Hikita
Publikováno v:
IEEE Transactions on Electron Devices. 54:3393-3399
We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor (GIT). This new device principle utilizes hole-injection from the p-AlGaN to the AlGaN/GaN heterojunction, which simultaneo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0bd6c87d327145da11319705569bfeb
https://doi.org/10.1109/ted.2007.908601
https://doi.org/10.1109/ted.2007.908601
Autor:
Yasuhiro Uemoto, Kenichiro Tanaka, Satoru Takahashi, Saichiro Kaneko, Tetsuzo Ueda, Tatsuo Morita, Masahiro Hikita, Ayanori Ikoshi, Masayuki Kuroda, Hideyuki Okita, Manabu Yanagihara
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Current collapse at high drain voltage in a GaN-based transistor is successfully suppressed by the introduction of p-GaN region which is placed beside the drain of a Gate Injection Transistor (GIT). The additional p-GaN region enables hole injection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9ce3ddd44c9661fef4c2577b66cd733
https://doi.org/10.1109/ispsd.2015.7123384
https://doi.org/10.1109/ispsd.2015.7123384
Autor:
Manabu Yanagihara, Inoue Kaoru, Yutaka Hirose, Masahiro Hikita, Daisuke Ueda, Tomohiro Murata, Hidetoshi Ishida, Tsuyoshi Tanaka, Takashi Egawa, Yasuhiro Uemoto
Publikováno v:
International Journal of High Speed Electronics and Systems. 16:469-477
We present results of some novel AlGaN/GaN heterojunction field-effect transistors (HFETs) specifically developed for RF front-end and power applications. To reduce the parasitic resistance, two unique techniques: selective Si doping into contact are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bef8f8af6c4224f274a5a441b572555
https://doi.org/10.1142/s0129156406003795
https://doi.org/10.1142/s0129156406003795
Autor:
Hiroaki Ueno, Yasuhiro Uemoto, Tetsuzo Ueda, Manabu Yanagihara, Yutaka Hirose, Daisuke Ueda, Masahiro Hikita, Tsuyoshi Tanaka, T. Egawa, K. Nakazawa
Publikováno v:
IEEE Transactions on Electron Devices. 52:1963-1968
We have developed a high-power AlGaN/GaN HFET fabricated on 4-in conductive Si substrate with a source-via grounding (SVG) structure. The SVG structure enables efficient chip layout and high packing density by the vertical configuration. By establish
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58ce64d0c1fe8daf8e87647bc863e071
https://doi.org/10.1109/ted.2005.854265
https://doi.org/10.1109/ted.2005.854265
Autor:
Hidetoshi Ishida, Daisuke Ueda, Manabu Yanagihara, Hisayoshi Matsuo, Tetsuzo Ueda, Yasuhiro Uemoto, Daisuke Shibata, Tsuyoshi Tanaka
Publikováno v:
IEEE Electron Device Letters. 29:1087-1089
A breakdown mechanism of polarized semiconductors represented by GaN-based materials is presented, based on the concept of a natural super junction, which is established by the inherent material polarization. In this concept, owing to the precise mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::864675887ea50a9d1abf47aa5c18089f
https://doi.org/10.1109/led.2008.2002753
https://doi.org/10.1109/led.2008.2002753