Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Manabu Saji"'
Autor:
Touati Ferid, Manabu Saji
Publikováno v:
Journal of Crystal Growth. 172:83-88
Hall measurements have been performed on gallium-doped n-type CdTe metalorganic vapor phase epitaxy layers between 25 and 300 K. The Hall coefficient and mobility data could be better explained assuming a singly ionized donor model. The ionization en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::443688d55541003992a4b570eb2fd4a5
https://doi.org/10.1016/s0022-0248(96)00740-3
https://doi.org/10.1016/s0022-0248(96)00740-3
Publikováno v:
Journal of Crystal Growth. 128:613-616
Correlations of surface morphology with the growth characteristics and optimal doping conditions of (100) CdTe layers grown by metalorganic vapor phase epitaxy have been studied. Growths were carried out on (100) GaAs substrates using diethyltelluriu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c049b95da0c4fb7fdfd3868ced012c38
https://doi.org/10.1016/s0022-0248(07)80010-8
https://doi.org/10.1016/s0022-0248(07)80010-8
Publikováno v:
Journal of Applied Physics. 72:3406-3409
Electronic properties in Ga‐doped (100) CdTe layers on (100) GaAs grown by atmospheric pressure metalorganic vapor phase epitaxy were studied. Triethylgallium was used as a dopant source. The source materials were dimethylcadmium (DMCd) and diethyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a4382d1bc51981f36bc545a361254a4
https://doi.org/10.1063/1.351412
https://doi.org/10.1063/1.351412
Publikováno v:
JOURNAL OF APPLIED PHYSICS. 71(6):2669-2674
The As doping mechanism in (100) CdTe layers grown on (100)GaAs by atmospheric‐pressure metalorganic vapor phase epitaxy was studied. Triethylarsine (TEAs) was used as a dopant source. The source materials used were dimethylcadmium (DMCd) and dieth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f2e4c8d90346a90bb117e2d64e2bfab8
http://id.nii.ac.jp/1476/00004130/
http://id.nii.ac.jp/1476/00004130/
Publikováno v:
Journal of Crystal Growth. 117:254-258
The mechanism of As incorporation in CdTe layers grown by atmospheric-pressure metalorganic vapor phase epitaxy (MOVPE) is reported. Triethylarsine (TEAs) was used as a dopant source. The As incorporation decreased with the DETe flow rate under a fix
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c10e2b8531efc40cd6e42d700d66253
https://doi.org/10.1016/0022-0248(92)90755-8
https://doi.org/10.1016/0022-0248(92)90755-8
Publikováno v:
JOURNAL OF APPLIED PHYSICS. 67(11):6865-6870
X‐ray photoelectron spectroscopy and Auger electron spectroscopy measurements were performed to investigate the initial growth mechanism and the selection of growth orientations of CdTe layers grown on (100) GaAs by metalorganic vapor phase epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d316e4e936a14e143c7b21e80cd04db
http://id.nii.ac.jp/1476/00004034/
http://id.nii.ac.jp/1476/00004034/
Publikováno v:
Journal of Crystal Growth. 99:727-730
Single crystal CdTe growth in a multi-zone vertical Bridgman furnace is reported. The furnace could produce any temperature profile between 26 and 0°C/cm on a programmed time schedule. The sticking mechanism of the grown ingot to the quartz ampoule
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::620a3844c4a53a6d287c8286d8f7a8cf
https://doi.org/10.1016/s0022-0248(08)80015-2
https://doi.org/10.1016/s0022-0248(08)80015-2
Publikováno v:
APPLIED PHYSICS LETTERS. 56(6):539-541
Variations of the GaAs surface conditions and the adsorption of the precursor elements of Cd and Te on the (100)GaAs substrate were studied by x‐ray photoelectron spectroscopy at the initial stage of CdTe growth by organometallic vapor phase epitax
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9a3923e4155e07c203bb86f8509ba13
http://id.nii.ac.jp/1476/00004020/
http://id.nii.ac.jp/1476/00004020/
Publikováno v:
MRS Proceedings. 198
XPS and AES analyses were performed to investigate the initial growth mechanism and the selection of the growth orientations of CdTe layers grown on (100) GaAs substrates by MOVPE. The (100) CdTe growth was reproducibly achieved when the GaAs surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e401603959a19348a89e0f249428733
https://doi.org/10.1557/proc-198-445
https://doi.org/10.1557/proc-198-445
Publikováno v:
Scopus-Elsevier
CdS films were cathodically electrodeposited from acidic solutions (pH=2.5) containing CdSO4 and Na2S2O3. Raman scattering of these films was measured using the 514.5 nm line of an Ar ion laser as the light source. The longitudinal-optical (LO) phono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7eea0dce5fab845a8809b4951dd7795
https://doi.org/10.1143/jjap.35.2057
https://doi.org/10.1143/jjap.35.2057