Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Manabu Itsumi"'
Autor:
Manabu Itsumi, Masahiko Maeda
Publikováno v:
Physica B: Condensed Matter. 324:167-172
Film stress of chemical vapor deposited silicon dioxide films was evaluated. All of the deposited films show tensile intrinsic stresses. Oxygen partial pressure dependence of the intrinsic stress is very close to that of deposition rate. The intrinsi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52481dae6787a2855f6579849b563ff3
https://doi.org/10.1016/s0921-4526(02)01291-7
https://doi.org/10.1016/s0921-4526(02)01291-7
Publikováno v:
Thin Solid Films. 411:274-279
The effects of annealing processes performed in inert gas and of electrode materials on SrBi2Ta2O9 (SBT) films are investigated to estimate the sensitivity and robustness of their dielectric and ferroelectric properties. SBT films 200-nm thick were s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231a0161932e8110545b395bbe608b9f
https://doi.org/10.1016/s0040-6090(02)00280-8
https://doi.org/10.1016/s0040-6090(02)00280-8
Autor:
Manabu Itsumi
Publikováno v:
Crystal Growth Technology
Dual-type octahedral void defects were found in Czochralski silicon in 1995. This was a trigger for a “renaissance” in the field of Si crystal investigation as well as a breakthrough toward the new stage of the next-generation Si-microelectronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d33175b8a5dcfc59ed7335575ba4a831
https://doi.org/10.1016/s0022-0248(01)02337-5
https://doi.org/10.1016/s0022-0248(01)02337-5
Autor:
Manabu Itsumi
Publikováno v:
Materials Science and Engineering: B. 73:184-190
During the past 20 years, there have been several breakthroughs regarding the research on grown-in defects in Czochralski silicon (CZ-Si) for commercial use. The presence of oxide defects originating in CZ-Si was first reported in 1979, and it was so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830bf575c56cbd9e5f2494396a5d403d
https://doi.org/10.1016/s0921-5107(99)00458-4
https://doi.org/10.1016/s0921-5107(99)00458-4
Autor:
Manabu Itsumi
Publikováno v:
Journal of Crystal Growth. 210:1-6
Octahedral void defects are widely recognized to be a cause of crystal-originated particles, flow-pattern defects, laser-scattering tomography defects, and oxide defects. Their structure has been characterized in detail and the dependence of their ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b68899951b69df5680c0207d9155b08a
https://doi.org/10.1016/s0022-0248(99)00636-3
https://doi.org/10.1016/s0022-0248(99)00636-3
Publikováno v:
Journal of Solid State Electrochemistry. 4:125-130
We have evaluated the electrical characteristics of silicon-nodule-related via failures in the aluminum interconnects of silicon integrated circuits. Current-voltage measurements indicated that the conduction mechanism follows Ohm's law. The resistan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd632c0e4f0cc4bc6867fd17a2d31ecf
https://doi.org/10.1007/s100080050009
https://doi.org/10.1007/s100080050009
Publikováno v:
Journal of Applied Physics. 86:2330-2333
We found that thermal oxidation of (001)-oriented Czochralski silicon produces oxide ridges which surround the oxide pits above the grown-in defects (or octahedral void defects), whereas thermal oxidation of (111)-oriented Czochralski silicon produce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfc90fa25cc298d93fbb12791d367d5b
https://doi.org/10.1063/1.371050
https://doi.org/10.1063/1.371050
Publikováno v:
Journal of Applied Physics. 86:1322-1325
We have found that thermal oxidation of Czochralski-grown-silicon substrates produces local circular stains around octahedral void defects. A plan view revealed that an octahedral void defect is situated near the center of a circular stain. Oxidation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ef1bfd162855288c98a3049f1f78c19
https://doi.org/10.1063/1.370889
https://doi.org/10.1063/1.370889
Autor:
Masahiko Maeda, Manabu Itsumi
Publikováno v:
Journal of Applied Physics. 84:5243-5247
Annealing characteristics of plasma-enhanced chemical vapor deposited silicon nitride films have been evaluated. Annealing temperature dependence for N–hydrogen bonds decreases monotonically with increasing temperature, while that for Si–hydrogen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48c39e4169457a39fbfcc56c2bf4e533
https://doi.org/10.1063/1.368813
https://doi.org/10.1063/1.368813
Publikováno v:
Journal of Applied Physics. 84:1241-1245
The dependence of the density of defects in the oxide on Czochralski silicon substrates on its thickness is discussed quantitatively in terms of the shape and the size of the octahedral void defects. Oxide thinning at corners of the void defects may
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2ef982dd7027833a67ca4f596308ae4
https://doi.org/10.1063/1.368190
https://doi.org/10.1063/1.368190