Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Man-Ping Cai"'
Autor:
Fareen Adeni Khaja, Venkataramana R. Chavva, Wesley Suen, Osbert Chan, Chi-Nung Ni, Man-Ping Cai, Thirumal Thanigaivelan, B. Colombeau, Motoya Okazaki, Hans-Joachim L. Gossmann, Adam Brand, Hao Chen, Shashank Sharma, Nilay Pradhan, Bingxi Wood, Andrew M. Waite, Miao Jin, Abhilash J. Mayur, Shiyu Sun, Chorng-Ping Chang, Naushad Variam, Samuel Swaroop Munnangi
Publikováno v:
ECS Transactions. 58:249-256
Fin Doping by Hot Implant for 14nm FinFET Technology and Beyond B. Wood, F. Khaja, B. Colombeau, S. Sun, A. Waite, M. Jin, H. Chen, O. Chan, T. Thanigaivelan, N. Pradhan, H.-J. Gossmann, S. Sharma, V. Chavva, M-P Cai, M. Okazaki, S. Munnangi, C-N Ni,
Autor:
Conley, Amiad, Meshulach, Doron, Gichon, Guy, Dolev, Ido, Perlovitch, Renana, Landwer, Niv, Ngai, Chris, Man-Ping Cai, Liyan Miao
Publikováno v:
2008 International Symposium on Semiconductor Manufacturing (ISSM); 2008, p11-14, 4p
Autor:
Motoya Okazaki, Adam Brand, Hao Chen, Miao Jin, Xinyu Bao, Ming Zhang, Bingxi Wood, Hongwen Zhou, Errol Antonio C. Sanchez, Christopher Hatem, Samuel Swaroop Munnangi, Man-Ping Cai
Publikováno v:
2015 International Symposium on VLSI Technology, Systems and Applications.
III-V materials are candidates for high mobility channel and low contact resistance SD at 5nm technology node and beyond [1]. Traditional Si+ ion implant of In 0.53 Ga 0.47 As at room temperature causes amorphization of fin and formation of stacking
Publikováno v:
ECS Meeting Abstracts. :2033-2033
In the fabrication of electronic and photonic devices, it is often necessary to control the geometric forms of single-crystal semiconductors—such as silicon or germanium—to optimize the device performance. This work presents a series of geometric
Autor:
Liyan Miao, Man-Ping Cai, Yongmei Chen, Chris Ngai, Christopher Dennis Bencher, Saar Shabtay, Noam Shachar, Gurminder Singh, Kfir Dotan
Publikováno v:
SPIE Proceedings.
The 22nm Spacer Self Aligned Double Patterning (SADP) process developed at Applied Materials' Maydan Technology Center was used to characterize small particle defects in the four critical steps of the process flow: Lithography, APF Etch, Spacer Depos
Autor:
Ofir Montal, Obert Wood, Tom Wallow, Man-Ping Cai, Chris Ngai, Moshe Rozentsvige, Christopher Dennis Bencher, Kfir Dotan, Ido Dolev, Uzodinma Okoroanyanwu, Amiad Conley
Publikováno v:
SPIE Proceedings.
EUV mask metrology and inspection challenges as well as EUV patterned wafer metrology and inspection strategies must be addressed to enable EUV patterning for pilot and high volume production. In this work we present a defectivity analysis of defects
Autor:
Ofer Adan, Eric Hendrickx, Moshe Rosenzweig, Kfir Dotan, Ofir Montal, Man-Ping Cai, Dieter Van den Heuvel, Doron Meshulach, Christopher Dennis Bencher, Shimon Levi, Ido Dolev, Christiane Jehoul, Chris Ngai
Publikováno v:
SPIE Proceedings.
Extreme ultraviolet (EUV) lithography is considered as the leading patterning technology beyond the ArF-based optical lithography, addressing the need for transistor densification to meet Moore's Law. Theoretically, EUV lithography at 13.5nm waveleng
Autor:
Man-Ping Cai, Shiany Oemardani, Pokhui Blanco, Yongmei Chen, Shiyu Sun, Xumou Xu, Osbert Chan, Chris Ngai, Raymond Hung, Liyan Miao, Huixiong Dai, Jaklyn Jin, James Yu, Chorng-Ping Chang, Ping Xu, Christopher Dennis Bencher
Publikováno v:
SPIE Proceedings.
Self-Aligned Double patterning (SADP) technology has been identified as the main stream patterning technique for NAND FLASH manufacturers for 3xnm and beyond. This paper demonstrates the successful fabrication of 32nm halfpitch electrical testable NA
Publikováno v:
Advances in Resist Materials and Processing Technology XXVI.
Chemical shrink and SAFIER are two resist shrinking processes that have been proved effective to reduce the trench and contact hole CD with enhanced resolution and process windows. Patterning sub-20 nm trenches, however, is found to be challenging us
Autor:
Man-ping Cai, E. B. Lee
Publikováno v:
Stochastic Theory and Adaptive Control ISBN: 9783540559627
Given measured frequency response data from a linear system (amplitude ratio and phase shift) at a significant number of frequencies, one can use a recently developed rational approximation algorithm to find a reasonable model of the system (in the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::437e604e5bf1b96bdd5abe8afbb89587
https://doi.org/10.1007/bfb0113232
https://doi.org/10.1007/bfb0113232