Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Man-Ho Kwan"'
Autor:
Man Ho Kwan, Wai Yeung Yan
Publikováno v:
ISPRS Annals of the Photogrammetry, Remote Sensing and Spatial Information Sciences, Vol V-3-2020, Pp 221-226 (2020)
Range normalization is a common data pre-process that aims to improve the radiometric quality of airborne LiDAR data. This radiometric treatment considers the rate of energy attenuation sustained by the laser pulse as it travels through a medium back
Autor:
Thomas Yang, Man-Ho Kwan, J. L. Yu, Alexander Kalnitsky, H. C. Tuan, Tom Tsai, Gaofei Tang, Lin You-Ru, Chan-Hong Chern, Fu-Wei Yao, Kevin J. Chen, Ru-Yi Su
Publikováno v:
IEEE Electron Device Letters. 39:1362-1365
The ${p}$ -GaN gate capacitors with a metal/ ${p}$ -GaN/AlGaN/GaN structure are demonstrated on an enhancement-mode (E-mode) GaN-on-Si power device platform. High capacitance density of >170 nF/cm2 is obtained with an operating voltage range of 0 ~ 7
Autor:
Gabriel Petrus Lansbergen, Ming-Cheng Lin, Man-Ho Kwan, C.H. Tsai, H. C. Tuan, Cheng-Pao Wu, Haw-Yun Wu, Alex Kalnitsky, J. L. Yu, Wen-Che Chang
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
To accelerate GaN adoption, beyond-JEDEC system-level reliability should be done to prove the robustness of GaN in applications. In this paper, a new hard switching test vehicle (half-bridge RC load) was proposed & demonstrated to achieve system-like
Autor:
Ru-Yi Su, H. C. Tuan, Tom Tsai, Zhaofu Zhang, J. L. Yu, Gaofei Tang, Fu-Wei Yao, Chan-Hong Chern, Jiacheng Lei, Man-Ho Kwan, Thomas Yang, Lin You-Ru, Kevin J. Chen, Jiabei He, Alexander Kalnitsky
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
An enhancement-mode GaN power switch with monolithically integrated gate driver is demonstrated on a 650-V GaN-on-Si power device platform. The integrated GaN-based gate driver features advanced designs such as bootstrapped gate-charging current sour
Autor:
King-Yuen Wong, Fu-Wei Yao, Chung-Yi Yu, Chih-Chieh Yeh, Yun-Hsiang Wang, Wen-De Wang, Yu-Syuan Lin, Ru-Yi Su, Ming-Huei Lin, S.-C. Liu, M.-H. Chang, Jan-Wen You, C.H. Tsai, S.-P. Wang, Man-Ho Kwan, Haw-Yun Wu, C. B. Wu, Ching-Ray Chen, Alex Kalnitsky, Tze-Chiang Huang, Chan-Hong Chern, L. Y. Tsai, H. C. Tuan, W.-C. Yang, J. L. Yu, Chen Po-Chih
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
This paper explores the next stage of GaN power devices with 2-level integration of peripheral low voltage active and passive devices. The 1st level consists of protection/control/driving circuits, which potentially improves the performance and overc
Publikováno v:
IEEE Transactions on Electron Devices. 62:1143-1149
We report the first gallium nitride (GaN)-based pulse width modulation (PWM) integrated circuit (IC) featuring monolithically integrated enhancement- and depletion-mode high electron mobility transistors and lateral field-effect rectifiers on the GaN
Publikováno v:
IEEE Transactions on Electron Devices. 61:2970-2976
On a GaN smart power integrated circuit (IC) platform, a highly linear (i.e., proportional to absolute temperature) temperature sensor IC is demonstrated for building voltage references as well as temperature compensation functional blocks. The circu
Publikováno v:
physica status solidi (a). 211:769-774
III-N devices are suitable for high power RF/microwave amplifier, high temperature electronics, and power switches applications, and the peripheral mixed-signal electronics with sensing, protection, and control functions could provide optimized perfo
Autor:
C.Y. Chan, J. L. Yu, Chang Yu-Chi, H. C. Tuan, C. B. Wu, Yu-Syuan Lin, Ru-Yi Su, King-Yuen Wong, Tsai Chun-Lin, Ming-Cheng Lin, Nan-Ying Yang, C.L. Yeh, Fu-Wei Yao, Man-Ho Kwan, Chen Po-Chih, M. W. Tsai, F. J. Yang, Alex Kalnitsky, Haw-Yun Wu, J. L. Tsai
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
GaN Cascode performance optimization for high efficient power applications is presented in this paper. Analytical equations of Cascode capacitance network (Ciss, Coss, Cgd) is demonstrated and the equations accuracy is verified through experimental m
Autor:
S. Nishino, Yoshihide Makino, Alex Man Ho Kwan, E. W. C. Chong, Ying-Fei Teh, Fan Zeng, Chunmei Huang, Man Wong, Toshiyuki Tsuchiya, Lei Lu, Osamu Tabata, Sichao Song, Ying-Khai Teh, William Hau, Akira Taniyama, Yan Gao, Xing Lu
Publikováno v:
Journal of Microelectromechanical Systems. 21:586-595
Reported presently are two design approaches to improve the performance of an electrothermal in-plane microactuator with “chevron” beams. One incorporates beams with uniform cross sections but nonuniform lengths or tilt angles to accommodate the