Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Man Pio Lam"'
Autor:
Danfeng Xu, Haikun Jia, Tairan Zhu, Xiaolong Liu, Yang Zhang, Man Pio Lam, C. Conroy, Quan Pan, Ming Kwan, Ka Fai Mak, Chi Fai Tang, Wing Hong Szeto, Zichuan Cheng, Paul Lai, Emily Yim Lee Au, Khawar Sarfraz, Yu Kou, L. Moser, Kai Keung Chan, Tze Yin Cheung
Publikováno v:
ISSCC
The proliferation of hyperscale data centers, as well as edge and 5G infrastructure build-outs, requires SerDes running at different rates, over different insertion losses, and in different environments. This work presents a scalable ADC/DSP-based tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9a12ac0f53aac946983e59f095cbe84
https://doi.org/10.1109/isscc42613.2021.9366063
https://doi.org/10.1109/isscc42613.2021.9366063
Autor:
Kevin Kornegay, Man Pio Lam
Publikováno v:
IEEE Transactions on Electron Devices. 46:546-554
Silicon carbide (SiC) CMOS circuits have been developed recently to provide monolithic control for SiC MOS power switching devices. Although SiC CMOS is not well suited for high-end microprocessor applications, it must provide the necessary response
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b21817a7219cbccd4ec866f35ff5055c
https://doi.org/10.1109/16.748875
https://doi.org/10.1109/16.748875
Autor:
Man Pio Lam, Kevin Kornegay
Publikováno v:
IEEE Transactions on Components and Packaging Technologies. 22:433-438
An experimental investigation of the effects of high temperature on short channel NMOS and PMOS transistors in 6H-SiC is reported. Punchthrough characteristics are presented and examined at room temperature and 300/spl deg/C. The punchthrough current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::547eb7cff96d2d797b4cbe2572bef8eb
https://doi.org/10.1109/6144.796547
https://doi.org/10.1109/6144.796547
Publikováno v:
IEEE Transactions on Electron Devices. 44:907-910
We use vanadium ion implantation to form a highly resistive surface layer in the wide bandgap semiconductor silicon carbide (SiC). MESFETs are successfully fabricated using this highly resistive layer to isolate gate metal extensions along the channe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::689c56580b6d06e0dad25cfe90924511
https://doi.org/10.1109/16.568059
https://doi.org/10.1109/16.568059