Výsledky vyhledávání - "Mamoru Ishizaki"

Amorphous oxide TFT and their applications in electrophoretic displays

Autor: Ryohei Matsubara, Norimasa Sekine, Manabu Ito, Masato Kon, Noriaki Ikeda, Chihiro Miyazaki, Yoshiko Ugajin, Mamoru Ishizaki

Publikováno v: physica status solidi (a). 205:1885-1894

Applications of amorphous oxide TFTs to electrophoretic display have been demonstrated. First, we focus attention on the low process temperature of amorphous In-Ga-Zn-O (a-IGZO) TFT and successfully fabricated a-IGZO TFT array onto poly-ethylene-naph

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce44fd51a255110234a847fe9087accc
https://doi.org/10.1002/pssa.200778910

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Application of amorphous oxide TFT to electrophoretic display

Autor: Mamoru Ishizaki, C. Miyazaki, K. Hatta, Yoshiko Ugajin, T. Okubo, Ryohei Matsubara, Norimasa Sekine, Manabu Ito, M. Kon, N. Ikeda

Publikováno v: Journal of Non-Crystalline Solids. 354:2777-2782

Application of amorphous oxide thin film transistor (TFT) to electronic paper is demonstrated. We have fabricated a 4-in. bottom gate amorphous In–Ga–Zn–O (a-IGZO) TFT array and combined it with an electrophoretic frontplane. The resolution of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::685852aa779267ed6c8f91592706e201
https://doi.org/10.1016/j.jnoncrysol.2007.10.083

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'Front Drive' Display Structure for Color Electronic Paper Using Fully Transparent Amorphous Oxide TFT Array

Autor: Norimasa Sekine, Manabu Ito, Mamoru Ishizaki, Yoshiko Ugajin, Chihiro Miyazaki, Masato Kon, Noriaki Ikeda

Publikováno v: IEICE Transactions on Electronics. :2105-2111

We demonstrate a novel display structure for color electronic paper for the first time. Fully transparent amorphous oxide TFT array is directly deposited onto color filter array and combined with E Ink Imaging Film. Taking advantage of the transparen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::50811d25c625f9eec7b19d255f89b27a
https://doi.org/10.1093/ietele/e90-c.11.2105

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Fabrication and Characterization of Cross-Edge-Structured Vertical Field Emitter Arrays

Autor: Hidenori Gamo, Junji Itoh, Seigo Kanemaru, Mamoru Ishizaki

Publikováno v: Japanese Journal of Applied Physics. 33:7171

New field emitter arrays (FEAs), called cross-edge-structured vertical FEAs, were fabricated and characterized. Chromium (Cr) emitters and molybdenum/Cr emitters were tested. The anode-current fraction was 50%, being improved in comparison with that

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14963d05834fad5c50443828e74e863c
https://doi.org/10.1143/jjap.33.7171

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Atomic Layer Epitaxy of AlAs and (AlAs)n(GaAs)n Superlattices Using Dimethylaluminumhydride as the Al Source

Autor: Mamoru Ishizaki, Nobuo Kano, Hiroshi Kukimoto, Junji Yoshino

Publikováno v: Japanese Journal of Applied Physics. 30:L435

Atomic layer epitaxy (ALE) of AlAs has been achieved by using nominally pure dimethylaluminumhydride as the Al source, instead of its mixing with trimethylaluminum which was used in our previous ALE growth of ALE. Short period superlattices of (AlAs)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d651a3ea717c50d311ae88e789d2685
https://doi.org/10.1143/jjap.30.l435

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Deposition of Ga, Al and As Layers by Laser-Assisted Decomposition of Trimethylgallium, Trimethylaluminum and Arsine

Autor: Hiroshi Komatsu, Yuzaburoh Ban, Hiroshi Kukimoto, Masaru Takechi, Mamoru Ishizaki

Publikováno v: Japanese Journal of Applied Physics. 29:1523

We have investigated the substrate temperature dependence of deposition rates for Ga, Al and As layers formed on fused quartz (Suprasil) substrates by ArF excimer laser-assisted chemical vapor deposition using trimethylgallium, trimethylaluminum and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ab274c559364cb0fc1698c7de3c7b992
https://doi.org/10.1143/jjap.29.1523

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Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth

Autor: Hiroshi Kukimoto, Mamoru Ishizaki, Yuzaburoh Ban, Hiroshi Murata, Masaru Takechi

Publikováno v: Japanese Journal of Applied Physics. 26:L1251

Laser-irradiation effects on the incorporation of n- and p-type impurities in GaAs have been studied by irradiating the substrate with an ArF excimer laser light during MOVPE growth. An n-type dopant source of TMSi is decomposed effectively by laser

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e191d7278ff2d25ebf9d5b4f22426c34
https://doi.org/10.1143/jjap.26.l1251

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Enhancement- and Depletion-Mode GaAs MESFETs Grown by Laser-Assisted MOVPE

Autor: Yuzaburoh Ban, Hiroshi Kukimoto, Yoshihisa Koyama, Mamoru Ishizaki, Tatsuya Asaka

Publikováno v: Japanese Journal of Applied Physics. 28:L1899

We have fabricated a pair of GaAs MESFETs operating in different modes, i.e., enhancement and depletion modes, on a single epitaxial wafer on the basis of laser-assisted metalorganic vapor phase epitaxy using tetramethylsilane as a photosensitive n-t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48655063cf66da321601aeb4982e0d76
https://doi.org/10.1143/jjap.28.l1899

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